Lab Engineer
Characteristics of diode laser structures on silicon substrates based on the Ga(NAsP)/(BGa)(AsP) materials combination
In: Photonics West
San Francisco, CA, USA
Conductivity and Charge Trapping After Electrical Stress in Amorphous and Polycrystalline Al2O3-Based Devices Studied With AFM-Related Techniques
In: IEEE Transactions on Nanotechnology vol. 10 pg. 344-351.
Crystallization and silicon diffusion nanoscale effects on the electrical properties of Al2O3 based devices
In: Microelectronic Engineering vol. 86 pg. 1921-1924.
Influence of the manufacturing process on the electrical properties of thin (< 4 nm) Hafnium based high-k stacks observed with CAFM
In: 18th European Symposium on Reliability of Electronic Devices, Failure Physics and Analysis (ESREF)
Arcachon, Frankreich
Influence of the manufacturing process on the electrical properties of thin (< 4 nm) Hafnium based high-k stacks observed with CAFM
In: Microelectronics Reliability vol. 47 pg. 1424-1428.
Raster-Sonden-Mikroskopie (SPM) in der Fehler- und Zuverlässigkeitsanalytik
In: VDE Fehlermechanismen bei kleinen Geometrien
Grainau
AFM-based scanning capacitance techniques for deep sub-micron semiconductor failure analysis
In: Microelectronics Reliability vol. 44 pg. 1615-1619.
DOI: 10.1016/j.microrel.2004.07.079
AFM-based scanning capacitance techniques for deep sub-micron semiconductor failure analysis
In: 15th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)
Zürich, Schweiz