"This site requires JavaScript to work correctly"
minimize Header

Heiko Ranzinger, M.Eng.

Institutes

Institute for Quality & Material Analysis

Lab Engineer

E 218

0991/3615-551

Sortierung:
Vortrag

  • S. Rogowsky
  • R. Ostendorf
  • G. Kaufel
  • W. Pletschen
  • J. Wagner
  • S. Liebich
  • M. Zimprich
  • K. Volz
  • W. Stolz
  • B. Kunert
  • Edgar Lodermeier
  • Heiko Ranzinger
  • Günther Benstetter

Characteristics of diode laser structures on silicon substrates based on the Ga(NAsP)/(BGa)(AsP) materials combination

In: Photonics West

San Francisco, CA, USA

  • Januar 2012 (2012)
  • IQMA
  • Elektrotechnik und Medientechnik
Zeitschriftenartikel

  • M. Lanza
  • M. Porti
  • M. Nafría
  • X. Aymerich
  • Günther Benstetter
  • Edgar Lodermeier
  • Heiko Ranzinger
  • G. Jaschke
  • S. Teichert
  • L. Wilde
  • P. Michalowski

Conductivity and Charge Trapping After Electrical Stress in Amorphous and Polycrystalline Al2O3-Based Devices Studied With AFM-Related Techniques

In: IEEE Transactions on Nanotechnology vol. 10 pg. 344-351.

  • (2011)

In this paper, atomic force microscopy-based techniques have been used to study, at nanoscale, the dependence of the electrical properties of Al2O3 stacks for flash memories on the annealing temperature (T-A). The electrical characterization has been combined with other techniques (for example, transmission electron microscopy) that have allowed to investigate the dependence of the stack crystallization and the Si diffusion from the substrate to the gate oxide on T-A. The combination of both the analyses has allowed to explore if there is a relation between the percentage of diffused silicon and material crystallization with the conductivity and charge trapping of Al2O3 stacks.
  • Elektrotechnik und Medientechnik
  • IQMA
Zeitschriftenartikel

  • M. Lanza
  • M. Porti
  • M. Nafría
  • X. Aymerich
  • Günther Benstetter
  • Edgar Lodermeier
  • Heiko Ranzinger
  • G. Jaschke
  • S. Teichert
  • L. Wilde
  • P. Michalowski

Crystallization and silicon diffusion nanoscale effects on the electrical properties of Al2O3 based devices

In: Microelectronic Engineering vol. 86 pg. 1921-1924.

  • (2009)

In this work, Atomic Force Microscopy (AFM) based techniques are used to study, at the nanoscale, the dependence of the electrical properties of Al2O3 stacks for Flash memories on the percent of diffused Silicon and material crystallization after being annealed at different temperatures.
  • IQMA
  • Elektrotechnik und Medientechnik
Vortrag

  • M. Lanza
  • M. Porti
  • M. Nafría
  • Günther Benstetter
  • Werner Frammelsberger
  • Heiko Ranzinger
  • Edgar Lodermeier
  • G. Jaschke

Influence of the manufacturing process on the electrical properties of thin (< 4 nm) Hafnium based high-k stacks observed with CAFM

In: 18th European Symposium on Reliability of Electronic Devices, Failure Physics and Analysis (ESREF)

Arcachon, Frankreich

  • 2007 (2007)
  • Elektrotechnik und Medientechnik
  • Maschinenbau und Mechatronik
  • IQMA
Zeitschriftenartikel

  • M. Lanza
  • M. Porti
  • M. Nafría
  • Günther Benstetter
  • Werner Frammelsberger
  • Heiko Ranzinger
  • Edgar Lodermeier
  • G. Jaschke

Influence of the manufacturing process on the electrical properties of thin (< 4 nm) Hafnium based high-k stacks observed with CAFM

In: Microelectronics Reliability vol. 47 pg. 1424-1428.

  • (2007)

In this work, the dependence of the electrical characteristics of some thin (<4 nm) HfO2, HfSiO and HfO2/SiO2 stacks on their manufacturing process is studied at the nanoscale. Topography, current maps and current–voltage (I–V) characteristics have been collected by conductive atomic force microscope (CAFM), which show that their conductivity depends on some manufacturing parameters. Increasing the annealing temperature, physical thickness or Hafnium content makes the structure less conductive.
  • Elektrotechnik und Medientechnik
  • IQMA
  • Maschinenbau und Mechatronik
Vortrag

  • Günther Benstetter
  • Werner Frammelsberger
  • Edgar Lodermeier
  • Heiko Ranzinger
  • D. Liu
  • Peter Breitschopf
  • W. Bergbauer
  • Alexander Hofer

Raster-Sonden-Mikroskopie (SPM) in der Fehler- und Zuverlässigkeitsanalytik

In: VDE Fehlermechanismen bei kleinen Geometrien

Grainau

  • 2006 (2006)
  • Elektrotechnik und Medientechnik
  • Maschinenbau und Mechatronik
  • IQMA
Zeitschriftenartikel

  • Günther Benstetter
  • Peter Breitschopf
  • Werner Frammelsberger
  • Heiko Ranzinger
  • P. Reislhuber
  • T. Schweinböck

AFM-based scanning capacitance techniques for deep sub-micron semiconductor failure analysis

In: Microelectronics Reliability vol. 44 pg. 1615-1619.

  • (2004)

DOI: 10.1016/j.microrel.2004.07.079

  • Elektrotechnik und Medientechnik
  • Maschinenbau und Mechatronik
  • IQMA
Vortrag

  • Günther Benstetter
  • Peter Breitschopf
  • Werner Frammelsberger
  • Heiko Ranzinger
  • P. Reislhuber
  • T. Schweinböck

AFM-based scanning capacitance techniques for deep sub-micron semiconductor failure analysis

In: 15th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)

Zürich, Schweiz

  • 2004 (2004)
  • Elektrotechnik und Medientechnik
  • Maschinenbau und Mechatronik
  • IQMA