Dr. Günther Ruhl

  • Chemie
  • Materialwissenschaften
  • Analytik

Wissenschaftlicher Mitarbeiter

TCTS O 17

09923/80108-506


Patent
  • R. Berger
  • W. Lehnert
  • G. Metzger-Brueckl
  • Günther Ruhl
  • R. Rupp
Wafer composite and method for producing semiconductor components
  • 2020
  • TC Teisnach Sensorik
  • NACHHALTIG
Patent
  • R. Rupp
  • Günther Ruhl
  • H.-J. Schulze
Silicon carbide semiconductor device and a method for forming a silicon carbide semiconductor device
  • 2020
  • TC Teisnach Sensorik
  • NACHHALTIG
Patent
  • M. König
  • Günther Ruhl
Schichtstruktur und Verfahren zur Herstellung einer Schichtstruktur
  • 2019
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Patent
  • T. Spöttl
  • J. Pohl
  • F. Püschner
  • Günther Ruhl
Elektronisches Identifikationsdokument und Verfahren zur Herstellung eines elektronischen Identifikationsdokuments
  • 2019
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • DIGITAL
Vortrag
  • Günther Ruhl
  • F. Czieslok
  • Raimund Förg
Sensorik mit 2D-Materialien

In: Technologietag Angewandte Sensorik

  • 2019
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Patent
  • Günther Ruhl
  • M. König
Process for the formation of a graphene membrane component, graphene membrane component, microphone and Hall-effect sensor
  • 2019
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Patent
  • H.-J. Schulze
  • Günther Ruhl
  • R. Rupp
Semiconductor devices and methods for forming semiconductor devices
  • 2019
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Patent
  • J. Laven
  • P. Irsigler
  • J. Mahler
  • Günther Ruhl
  • H.-J. Schulze
  • M. Zundel
Semiconductor device including a heat sink structure
  • 2019
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Zeitschriftenartikel
  • M. König
  • Günther Ruhl
  • A. Gahoi
  • S. Wittman
  • T. Preis
  • J.-M. Batke
  • I. Costina
  • M. Lemme
Accurate Graphene-Metal Junction Characterization, vol. 7, pg. 219-226.

In: IEEE Journal of the Electron Devices Society (J-EDS)

  • 2019

DOI: 10.1109/JEDS.2019.2891516

A reliable method is proposed for measuring specific contact resistivity (p C ) for graphenemetal contacts, which is based on a contact end resistance measurement. We investigate the proposed method with simulations and confirm that the sheet resistance under the metal contact (R SK ) plays an important role, as it influences the potential barrier at the graphene-metal junction. Two different complementary metal-oxide-semiconductor-compatible aluminum-based contacts are investigated to demonstrate the importance of the sheet resistance under the metal contact: the difference in R SK arises from the formation of insulating aluminum oxide (Al 2 O 3 ) and aluminum carbide (Al 4 C 3 ) interfacial layers, which depends on the graphene pretreatment and process conditions. Auger electron spectroscopy and X-ray photoelectron spectroscopy support electrical data. The method allows direct measurements of contact parameters with one contact pair and enables small test structures. It is further more reliable than the conventional transfer length method when the sheet resistance of the material under the contact is large. The proposed method is thus ideal for geometrically small contacts where it minimizes measurement errors and it can be applied in particular to study emerging devices and materials.
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Patent
  • H. Theuss
  • G. Beer
  • S. Beer
  • A. Dehe
  • F. Jost
  • S. Kolb
  • Günther Ruhl
  • R. Schaller
Photo-acoustic gas sensor module having light emitter and detector units
  • 2019
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Patent
  • M. König
  • Günther Ruhl
Elektronische Vorrichtung
  • 2019
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Beitrag (Sammelband oder Tagungsband)
  • Alois Kasberger
  • Benedikt Winter
  • T. Ullrich
  • Günther Ruhl
  • Raimund Förg
Entwicklung einer wasserdichten LED Flächenleuchte mit direkt im Glas eingebrachtem Konvertermaterial. Poster
  • 2019
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Patent
  • Günther Ruhl
  • T. Hirsch
  • G. Poeppel
  • H. Roedig
Sensor arrangement for particle analysis and a method for particle analysis
  • 2019
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Patent
  • W. Lehnert
  • R. Berger
  • A. Birner
  • H. Brech
  • O. Haeberlen
  • Günther Ruhl
  • R. Rupp
Method of manufacturing semiconductor devices by bonding a semiconductor disk on a base substrate, composite wafer and semiconductor device
  • 2019
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Vortrag
  • Alois Kasberger
  • Günther Ruhl
  • Stefan Menzel
  • Raimund Förg
Development of a waterproof, high color fidelity LED Light Panel

In: 6th European Seminar on Precision Optics Manufacturing (POM19)

  • 2019
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • DIGITAL
  • NACHHALTIG
Patent
  • M. Hammer
  • Günther Ruhl
Fahrzeugbeleuchtungsanordnung, Leuchtmitteltreiberschaltung und Verfahren zur Bereitstellung von Informationen zur Bestimmung eines Beleuchtungszustandes
  • 2019
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Patent
  • Günther Ruhl
  • G. Lippert
  • H.-J. Schulze
  • T. Zimmer
Method of manufacturing a semiconductor device having graphene material
  • 2019
  • TC Teisnach Sensorik
  • NACHHALTIG
Patent
  • Günther Ruhl
  • T. Hirsch
  • A. Zoepfl
Graphene gas sensor for measuring the concentration of carbon dioxide in gas environments
  • 2018
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Vortrag
  • Liane Bingel
  • Günther Ruhl
  • Raimund Förg
Glas als Verpackungsmaterial für Lebensmittel. Posterpräsentation

In: 5. Tag der Forschung

  • 2018
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Patent
  • K. Elian
  • J. Dangelmaier
  • F. Darrer
  • T. Mueller
  • M. Vaupel
  • M. Fries
  • Günther Ruhl
  • H. Theuss
  • M. Rose
  • S. Auer
  • Wee, T. F. D.
  • S. Chiang
Sensor arrangement, battery cell and energy system
  • 2018
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Patent
  • T. Spoettl
  • F. Pueschner
  • Günther Ruhl
  • Stampka P.
Semiconductor package, smart card and method for producing a semiconductor package
  • 2018
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Patent
  • Günther Ruhl
  • M. Koenig
Process for the formation of a graphene membrane component, graphene membrane component, microphone and Hall-effect sensor
  • 2018
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Patent
  • Günther Ruhl
  • K.-O. Subke
  • R. Berger
Verfahren zur Herstellung eines Grabenkondensators
  • 2018
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Patent
  • H.-J. Schulze
  • Günther Ruhl
  • H.-J. Timme
Semiconductor device including a phase change material
  • 2018
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Patent
  • M. Koenig
  • Günther Ruhl
Method for processing a carrier and method for transferring a graphene layer
  • 2018
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Patent
  • Günther Ruhl
  • H.-J. Schulze
  • T. Zimmer
  • W. Lippert
Semiconductor device having a graphene layer, and method manufactoring thereof
  • 2018
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Patent
  • Günther Ruhl
  • W. Lehnert
  • R. Berger
Two-dimensional material containing electronic components
  • 2017
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Zeitschriftenartikel
  • F. Streb
  • M. Mengel
  • D. Schweitzer
  • C. Kasztelan
  • P. Schoderböck
  • Günther Ruhl
  • T. Lampke
Characterization methods for solid thermal interface materials, vol. 8, pg. 1024-1031.

In: IEEE Transactions on Components, Packaging and Manufacturing Technology

  • 2017

DOI: 10.1109/TCPMT.2017.2748238

Thermal interface materials (TIMs) play a major role in the performance of semiconductor devices by optimizing the thermal contact between device and heatsink. Their influence is further increasing with the usage of novel chip materials such as SiC and GaN. In this methodology study, we compared five of the most established evaluation methods for solid TIMs with each other: transient plane source, LaserFlash, DynTIM, TIMA, and an application-oriented Rth measurement system. We investigated a wide range of typical TIMs in order to explore the limits of the different measurement systems. The results show that, despite existing norms, the used characterization method has a significant influence on the measured thermal conductivity. We also show that the temperature and pressure dependence has a significant influence on the thermal performance of TIMs and that these data need to be included in device specifications. Additionally, detailed error analysis and discussion about sample selection, error influence, and measurement effort for the presented methods are given.
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Patent
  • K. Elian
  • Günther Ruhl
  • H. Theuss
  • I. Escher-Poeppel
Method for making a sensor device using a graphene layer
  • 2017
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Patent
  • J. Mahler
  • R. Otremba
  • H.-J. Schulze
  • Günther Ruhl
  • H.-J. Timme
Power semiconductor device including a cooling material
  • 2017
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Patent
  • M. Eckinger
  • A. Dehe
  • S. Kolb
  • Günther Ruhl
Hall effect sensor with graphene detection layer
  • 2017
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Patent
  • Günther Ruhl
  • K. Pruegl
Method for processing a carrier
  • 2017
  • TC Teisnach Sensorik
  • NACHHALTIG
Zeitschriftenartikel
  • Günther Ruhl
  • S. Wittmann
  • M. König
  • D. Neumaier
The integration of graphene into microelectronic devices, vol. 8, pg. 1056-1064.

In: Beilstein Journal of Nanotechnology

  • 2017

DOI: 10.3762/bjnano.8.107

Since 2004 the field of graphene research has attracted increasing interest worldwide. Especially the integration of graphene into microelectronic devices has the potential for numerous applications. Therefore, we summarize the current knowledge on this aspect. Surveys show that considerable progress was made in the field of graphene synthesis. However, the central issue consists of the availability of techniques suitable for production for the deposition of graphene on dielectric substrates. Besides, the encapsulation of graphene for further processing while maintaining its properties poses a challenge. Regarding the graphene/metal contact intensive research was done and recently substantial advancements were made towards contact resistances applicable for electronic devices. Generally speaking the crucial issues for graphene integration are identified today and the corresponding research tasks can be clearly defined.
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Patent
  • R. Berger
  • H. Gruber
  • W. Lehnert
  • Günther Ruhl
  • R. Foerg
  • A. Mauder
  • H.-J. Schulze
  • M. Sommer
  • C. Rottmair
  • R. Rupp
Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite core
  • 2017
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Patent
  • Günther Ruhl
  • F. Bachl
Fluid sensor chip and method for manufacturing the same
  • 2017
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Patent
  • K. Elian
  • J. Dangelmaier
  • M. Fies
  • J. Hoegerl
  • G. Meyer-Berg
  • T. Mueller
  • Günther Ruhl
  • H. Theuss
  • M. Vaupel
Apparatus for determining a state of a rechargeable battery or of a battery, a rechargeable battery or a battery, and a method for determining a state of a rechargeable battery or of a battery
  • 2017
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Patent
  • H.-J. Schulze
  • P. Irsigler
  • Günther Ruhl
Method of forming a graphene structure
  • 2017
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Patent
  • Günther Ruhl
  • R. Foerg
Electrical contact for graphene part
  • 2016
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Patent
  • Günther Ruhl
  • F. Bachl
Fluid sensor chip and method for manufacturing the same
  • 2016
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Zeitschriftenartikel
  • F. Streb
  • Günther Ruhl
  • A. Schubert
  • H. Zeidler
  • M. Penzel
  • S. Flemmig
  • I. Todaro
  • R. Squatrito
  • T. Lampke
Simulations and measurements of annealed pyrolytic graphite-metal composite baseplates, vol. 118, pg. 012013.

In: IOP Conference Series: Materials Science and Engineering

  • 2016
We investigated the usability of anisotropic materials as inserts in aluminum-matrix-composite baseplates for typical high performance power semiconductor modules using finite-element simulations and transient plane source measurements. For simulations, several physical modules can be used, which are suitable for different thermal boundary conditions. By comparing different modules and options of heat transfer we found non-isothermal simulations to be closest to reality for temperature distribution at the surface of the heat sink. We optimized the geometry of the graphite inserts for best heat dissipation and based on these results evaluated the thermal resistance of a typical power module using calculation time optimized steady-state simulations. Here we investigated the influence of thermal contact conductance (TCC) between metal matrix and inserts on the heat dissipation. We found improved heat dissipation compared to the plain metal baseplate for a TCC of 200 kW/m2/K and above.To verify the simulations we evaluated cast composite baseplates with two different insert geometries and measured their averaged lateral thermal conductivity using a transient plane source (HotDisk) technique at room temperature. For the composite baseplate we achieved local improvements in heat dissipation compared to the plain metal baseplate.
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Patent
  • A. Dehe
  • Günther Ruhl
MEMS acoustic transducer, MEMS microphone, MEMS microspeaker, array of speakers and method for manufacturing an acoustic transducer
  • 2016
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Patent
  • R. Berger
  • H.-J. Schulze
  • A. Mauder
  • W. Lehnert
  • Günther Ruhl
  • R. Rupp
Composite wafer for bonding and encapsulation of a SiC-based functional layer
  • 2016
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Vortrag
  • Günther Ruhl
Challenges in process integration of graphene for manufacturing microelectronic devices. eingeladener Vortrag

In: Graphene Week 2016

  • 2016
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Patent
  • R. Berger
  • H. Gruber
  • W. Lehnert
  • Günther Ruhl
  • R. Foerg
  • A. Mauder
  • H.-J. Schulze
Method for manufacturing a composite wafer having a graphite core
  • 2016
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Patent
  • Günther Ruhl
  • K. Pruegl
Method for processing a carrier and an electronic component
  • 2016
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Zeitschriftenartikel
  • M. König
  • Günther Ruhl
  • J.-M. Batke
  • M. Lemme
Self-organized growth of graphene nanomesh with increased gas sensitivity, vol. 8, pg. 15490-15496.

In: Nanoscale

  • 2016
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Patent
  • M. Koenig
  • Günther Ruhl
Electronic device
  • 2016
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Patent
  • C. Kegler
  • J. Laven
  • H.-J. Schulze
  • Günther Ruhl
  • J. Mahler
Temperature sensor
  • 2016
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Patent
  • K. Elian
  • H. Theuss
  • Günther Ruhl
Sensor module and battery elements
  • 2015
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Patent
  • K. Elian
  • Günther Ruhl
  • H. Theuss
  • I. Escher-Poeppel
Sensorbauelement und Verfahren
  • 2015
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Patent
  • R. Berger
  • Günther Ruhl
  • W. Lehnert
  • R. Rupp
Compound structure and method for forming a compound structure
  • 2015
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Patent
  • R. Berger
  • H. Gruber
  • W. Lehnert
  • Günther Ruhl
  • R. Foerg
  • A. Mauder
  • H.-J. Schulze
  • M. Sommer
  • C. Rottmair
  • R. Rupp
Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite core
  • 2015
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Patent
  • M. Vaupel
  • Günther Ruhl
Semiconductor dies having opposite sides with different reflectivity
  • 2015
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Patent
  • H.-J. Schulze
  • Günther Ruhl
  • H.-J. Timme
Semiconductor device including a phase change material
  • 2015
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Patent
  • K. Elian
  • H. Theuss
  • Günther Ruhl
Sensor package and method of manufacturing thereof
  • 2015
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Zeitschriftenartikel
  • S. Vaziri
  • A. Smith
  • M. Östling
  • G. Lupina
  • J. Dabrowski
  • G. Lippert
  • W. Mehr
  • F. Driussi
  • S. Venica
  • V. Di Leece
  • A. Gnudi
  • M. König
  • Günther Ruhl
  • M. Belete
  • M. Lemme
Going ballistic: Graphene hot electron transistors, vol. 224, pg. 64-75.

In: Solid State Communications

  • 2015

DOI: 10.1016/j.ssc.2015.08.012

  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
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Zeitschriftenartikel
  • G. Lupina
  • J. Kitzmann
  • I. Costina
  • M. Lukosius
  • C. Wenger
  • A. Wolff
  • S. Vaziri
  • M. Östling
  • I. Pasternak
  • A. Krajewska
  • W. Strupinski
  • S. Kataria
  • A. Gahoi
  • M. Lemme
  • Günther Ruhl
  • G. Zoth
  • O. Luxenhofer
  • W. Mehr
Residual Metallic Contamination of Transferred Chemical Vapor Deposited Graphene, vol. 9, pg. 4776-4785.

In: ACS Nano

  • 2015

DOI: 10.1021/acsnano.5b01261

Integration of graphene with Si microelectronics is very appealing by offering a potentially broad range of new functionalities. New materials to be integrated with the Si platform must conform to stringent purity standards. Here, we investigate graphene layers grown on copper foils by chemical vapor deposition and transferred to silicon wafers by wet etching and electrochemical delamination methods with respect to residual submonolayer metallic contaminations. Regardless of the transfer method and associated cleaning scheme, time-of-flight secondary ion mass spectrometry and total reflection X-ray fluorescence measurements indicate that the graphene sheets are contaminated with residual metals (copper, iron) with a concentration exceeding 1013 atoms/cm2. These metal impurities appear to be partially mobile upon thermal treatment, as shown by depth profiling and reduction of the minority charge carrier diffusion length in the silicon substrate. As residual metallic impurities can significantly alter electronic and electrochemical properties of graphene and can severely impede the process of integration with silicon microelectronics, these results reveal that further progress in synthesis, handling, and cleaning of graphene is required to advance electronic and optoelectronic applications.
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Patent
  • K. Elian
  • Günther Ruhl
  • H. Theuss
  • I. Escher-Poeppel
Method for making a sensor device using a graphene layer
  • 2015
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Patent
  • R. Berger
  • H. Gruber
  • W. Lehnert
  • Günther Ruhl
  • R. Foerg
  • A. Mauder
  • H.-J. Schulze
  • M. Sommer
  • C. Rottmair
  • R. Rupp
Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite core
  • 2014
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Patent
  • M. Hammer
  • Günther Ruhl
Vehicle lighting arrangement
  • 2014
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Zeitschriftenartikel
  • A. Zöpfl
  • M.-M. Lemberger
  • M. König
  • Günther Ruhl
  • F.-M. Matysik
  • T. Hirsch
Reduced graphene oxide and graphene composite materials for improved gas sensing at low temperature, vol. 173, pg. 403-414.

In: Faraday Discussions

  • 2014

DOI: 10.1039/c4fd00086b

Reduced graphene oxide (rGO) was investigated as a material for use in chemiresistive gas sensors. The carbon nanomaterial was transferred onto a silicon wafer with interdigital gold electrodes. Spin coating turned out to be the most reliable transfer technique, resulting in consistent rGO layers of reproducible quality. Fast changes in the electrical resistance at a low operating temperature of 85 °C could be detected for the gases NO(2), CH(4) and H(2). Especially upon adsorption of NO(2) the high signal changes allowed a minimum detection of 0.3 ppm (S/N = 3). To overcome the poor selectivity, rGO was chemically functionalized with octadecylamine, or modified by doping with metal nanoparticles such as Pd and Pt, and also metal oxides such as MnO(2), and TiO(2). The different response patterns for six different materials allowed the discrimination of all of the test gases by pattern recognition based on principal component analysis.
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Vortrag
  • Günther Ruhl
Perspectives of Graphene in Semiconductor Industry. eingeladener Vortrag

In: TNT 2014

  • 2014
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Vortrag
  • Günther Ruhl
Graphene- Balancing the Elephant. Eingeladener Vortrag

In: IHP Institutsseminar

  • 2014
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Patent
  • K. Elian
  • Günther Ruhl
  • H. Theuss
  • I. Escher-Poeppel
Method for making a sensor device using a graphene layer
  • 2014
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Vortrag
  • Günther Ruhl
Graphene - Balancing the Elephant. Eingeladener Vortrag

In: 6. NRW Nano-Konferenz

  • 2014
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Patent
  • M. Hammer
  • Günther Ruhl
  • A. Strasser
  • M. Melzl
  • R. Goellner
  • D. Groteloh
Method of processing a contact pad, method of manufacturing a contact pad, and integrated circuit element
  • 2014
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Zeitschriftenartikel
  • Günther Ruhl
  • W. Lehnert
  • M. Lukosius
  • C. Wenger
  • C. Baristiran Kaynak
  • T. Blomberg
  • S. Haukkac
  • P. Baumann
  • W. Besling
  • A. Roeste
  • B. Riou
  • S. Lhostif
  • A. Halimaou
  • F. Roozeboom
  • E. Langereis
  • W.M.M. Kessels
  • A. Zauner
  • S. Rushworth
Dielectric Material Options for Integrated Capacitors, vol. 3, pg. N120-N125.

In: ECS Journal of Solid State Science and Technology

  • 2014

DOI: 10.1149/2.0101408jss

Future MIM capacitor generations will require significantly increased specific capacitances by utilization of high-k dielectric materials. In order to achieve high capacitance per chip area, these dielectrics have to be deposited in three-dimensional capacitor structures by ALD or AVD (atomic vapor deposition) process techniques. In this study eight dielectric materials, which can be deposited by these techniques and exhibit the potential to reach k-values of over 50 were identified, prepared and characterized as single films and stacked film systems. To primarily focus on a material comparison, preliminary processes were used for film deposition on planar test devices. Measuring leakage current density versus the dielectric constant k shows that at low voltages (≤1 V) dielectrics with k-values up to 100 satisfy the typical leakage current density specification of <10−7 A/cm2 for MIM capacitors. At higher voltages (3 V) this specification is only fulfilled for dielectrics with k-values below 45. As a consequence, the maximum achievable capacitance gain by introducing high-k dielectrics depends on the operating voltage of the application, such as DRAM capacitors or RF and blocking capacitors. To meet the reliability requirements for RF and blocking capacitors, high-k dielectric film thicknesses of up to 50 nm are necessary.
  • TC Teisnach Sensorik
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Patent
  • Günther Ruhl
  • M. Hammer
  • R. Kainzbauer
Integriertes Bauelement und Verfahren zur Trennung einer elektrisch leitfähigen Verbindung
  • 2014
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Vortrag
  • Günther Ruhl
Perspective of ICT industry on the use of graphene. Eingeladener Vortrag

In: 6th Stuttgart NanoDays Workshop

  • 2014
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Patent
  • Günther Ruhl
  • M. Hammer
  • R. Kainzbauer
System for separation of an electrically conductive connection
  • 2013
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Patent
  • R. Berger
  • H. Gruber
  • W. Lehnert
  • Günther Ruhl
  • R. Foerg
  • A. Mauder
  • H.-J. Schulze
Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite core
  • 2013
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Zeitschriftenartikel
  • M. Lukosius
  • C. Wenger
  • T. Blomberg
  • Günther Ruhl
Properties of stacked SrTiO3/Al2O3 metal–insulator–metal capacitors, vol. 31, pg. 01A102.

In: Journal of Vacuum Science & Technology B

  • 2013

DOI: 10.1116/1.4766183

The possibilities to grow thin films of SrTiO3 and Al2O3 by atomic layer deposition for stacked metal–insulator–metal capacitors have been investigated in this work. In order to tune the functional properties of the capacitors, different processing steps have been employed to realize different combinations of the dielectric stacks. Electrical properties, extracted after the postdeposition annealing and sputter deposition of the Au top electrodes, indicated that the metal–insulator–metal (MIM) structures with additional Al2O3 layer provided better leakage currents densities, compared to the ones with single SrTiO3 based MIM capacitors, but the dielectric constant values have also decreased if additional Al2O3 film was inserted. Attempts to optimize the properties of the MIM stacks have been done by manufacturing heterostructures of Al2O3/SrTiO3/Al2O3 as well as SrTiO3/Al2O3/SrTiO3. In the first case, Al2O3 prevented the crystallization of SrTiO3 in the multilayer dielectric structure and therefore reduced the total capacitance density of the particular MIM stack, whereas the SrTiO3/Al2O3/SrTiO3 stack was found to possess superior electrical properties. Leakage current density as low as ∼10−8 A/cm2 at 2 V and the dielectric constant value of 40 have been extracted.
  • TC Teisnach Sensorik
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Zeitschriftenartikel
  • M. Lukosius
  • C. Baristiran Kaynak
  • S. Kubotsch
  • T. Blomberg
  • Günther Ruhl
  • C. Wenger
Properties of atomic-vapor and atomic-layer deposited Sr, Ti, and Nb doped Ta2O5 Metal–Insulator–Metal capacitors, vol. 520, pg. 4576-4579.

In: Thin Solid Films

  • 2012

DOI: 10.1016/j.tsf.2011.10.199

Atomic Vapor Deposition and Atomic Layer Deposition techniques were applied for the depositions of Ta2O5, Ti–Ta–O, Sr–Ta–O and Nb–Ta–O oxide films for Metal–Insulator–Metal (MIM) capacitors used in back-end of line for Radio Frequency applications. Structural and electrical properties were studied. Films, deposited on the TiN bottom electrodes, in the temperature range of 225–400 °C, were amorphous, whereas the post deposition annealing at 600 °C resulted in the crystallization of Nb–Ta–O films. Electrical properties of MIM structures, investigated after sputtering Au top electrodes, revealed that the main characteristics were different for each oxide. On one hand, Ti–Ta–O based MIM capacitors possessed the highest dielectric constant (50), but the leakages currents were also the highest (~ 10− 5 A/cm2 at − 2 V). On the other hand, Sr–Ta–O showed the lowest leakage current densities (~ 10− 9 A/cm2 at − 2 V) as well as the smallest capacitance–voltage nonlinearity coefficients (40 ppm/V2), but the dielectric constant was the smallest (20). The highest nonlinearity coefficients (290 ppm/V2) were observed for Nb–Ta–O based MIM capacitors, although relatively high dielectric constant (40) and low leakage currents (~ 10− 7 A/cm2 at − 2 V) were measured. Temperature dependent leakage-voltage measurements revealed that only Sr–Ta–O showed no dependence of leakage current as a function of the measurement temperature.
  • TC Teisnach Sensorik
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Zeitschriftenartikel
  • M. Lukosius
  • T. Blomberg
  • D. Walcyk
  • Günther Ruhl
  • C. Wenger
Metal-Insulator-Metal capacitors with ALD grown SrTiO3: Influence of Pt electrodes, vol. 41, pg. 012015.

In: IOP Conference Series: Materials Science and Engineering

  • 2012
Metal-Insulator-metal (MIM) capacitors with atomic layer deposited (ALD) single SrTiO3 dielectric have been investigated in this work. Structural and electrical properties were studied after the formation of the MIM stack consisting of the platinum (Pt) bottom electrode, 50 nm SrTiO3 layer and the top Pt electrode. The as deposited films were amorphous and had a dielectric constant of ~ 10, whereas the annealing of the samples in the nitrogen (N2) or oxygen (O2) atmosphere at 550-600 °C led to the crystallization of the SrTiO3 and therefore to the increased dielectric constant of ~ 85. In addition, the electrical results revealed that the combination of SrTiO3 with the high work function electrode like Pt, provided better leakage current performance in comparison with TiN/ SrTiO3 stacks. The values as low as ~ 10−7 A/cm2 at 2 V were observed for both in N2 or O2 annealed SrTiO3 layers. On the other hand, the samples annealed in O2 atmosphere at 600 °C possessed lower capacitance-voltage nonlinearity coefficients (−645 ppm/V2) than the ones for N2 annealed samples (-2700 ppm/V2).
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
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Patent
  • M. Engelhardt
  • H.-J. Timme
  • I. Nikitin
  • M. Frank
  • T. Kunstmann
  • W. Robl
  • Günther Ruhl
Method of processing a semiconductor wafer or die, and particle deposition device
  • 2012
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Vortrag
  • Günther Ruhl
  • M. Lukosius
Material Options for Integrated MIM Capacitors. Eingeladener Vortrag

In: WoDiM 2012

  • 2012
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Zeitschriftenartikel
  • W. Lehnert
  • Günther Ruhl
  • A. Gschwandtner
Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide, vol. 30, pg. 01A152.

In: Journal of Vacuum Science & Technology A

  • 2012

DOI: 10.1116/1.3670876

Among many promising high-k dielectrics, TiO2 is an interesting candidate because of its relatively high k value of over 40 and its easy integration into existing semiconductor manufacturing schemes. The most critical issues of TiO2 are its low electrical stability and its high leakage current density. However, doping TiO2 with Al has shown to yield significant improvement of layer quality on Ru electrodes [S. K. Kim et al., Adv. Mater. 20, 1429 (2008)]. In this work we investigated if atomic layer deposition (ALD) of Al doped TiO2 is feasible in a batch system. Electrical characterizations were done using common electrode materials like TiN, TaN, or W. Additionally, the effect of plasma enhanced processing in this reactor was studied. For this investigation a production batch ALD furnace has been retrofitted with a plasma source which can be used for post deposition anneals with oxygen radicals as well as for directly plasma enhanced ALD. After evaluation of several Ti precursors a deposition process for AlTiOx with excellent film thickness and composition uniformity was developed. The effects of post deposition anneals, Al2O3 interlayers between electrode and TiO2, Al doping concentration, plasma enhanced deposition and electrode material type on leakage current density are shown. An optimized AlTiOx deposition process on TaN electrodes yields to leakage current density of 5 × 10−7 A/cm2 at 2 V and k values of about 35. Thus, it could be demonstrated that a plasma enhanced batch ALD process for Al doped TiO2 is feasible with acceptable leakage current density on a standard electrode material.
  • TC Teisnach Sensorik
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Zeitschriftenartikel
  • M. Lukosius
  • C. Wenger
  • T. Blomberg
  • A. Abrutis
  • G. Lupina
  • P. Baumann
  • Günther Ruhl
Electrical and Morphological Properties of ALD and AVD Grown Perovskite-Type Dielectrics and Their Stacks for Metal-Insulator-Metal Applications, vol. 1, pg. N1-N5.

In: ECS Journal of Solid State Science and Technology

  • 2012
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Vortrag
  • Günther Ruhl
MaxCaps – Next Generation Dielectrics for Integrated Capacitors. Eingeladener Vortrag

In: Semicon Europe 2011

  • 2011
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Zeitschriftenartikel
  • C. Baristiran Kaynak
  • M. Lukosius
  • B. Tillack
  • C. Wenger
  • T. Blomberg
  • Günther Ruhl
Single SrTiO3 and Al2O3/SrTiO3/Al2O3 based MIM capacitors: Impact of the bottom electrode material, vol. 88, pg. 1521-1524.

In: Microelectronic Engineering

  • 2011

DOI: 10.1016/j.mee.2011.03.022

Metal–Insulator–Metal (MIM) capacitors with atomic layer deposited (ALD) single SrTiO3 dielectric and Al2O3/SrTiO3/Al2O3 multilayer dielectric have been deposited on TaN and TiN bottom electrodes. The MIM stacks have been analyzed and compared in terms of electrical and structural properties. The results indicate that MIMs with multilayer dielectrics provide better leakage current performance than the ones with single dielectrics while capacitance density is decreased. Additional Al2O3 layers prevented the crystallization of SrTiO3 in the multilayer dielectric stack. The decreased capacitance density in MIMs with multilayer dielectric is attributed to the amorphous structure of SrTiO3 and the series capacitance of top and bottom Al2O3 layers. Furthermore, MIM capacitors with single SrTiO3 dielectric layer on TiN electrodes indicated better capacitance density compared to the one with TaN electrodes. The lower capacitance density of the single SrTiO3 dielectric on TaN electrodes is correlated to the interfacial layer formation between SrTiO3 and TaN electrodes.
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
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Vortrag
  • Günther Ruhl
  • W. Lehnert
  • C. Wenger
CVD grown ternary high-k oxides for MIM capacitors

In: Novel High-k Applications Workshop

  • 2011
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Zeitschriftenartikel
  • C. Wenger
  • M. Lukosius
  • T. Blomberg
  • A. Abrutis
  • P. Baumann
  • Günther Ruhl
ALD and AVD Grown Perovskite-type Dielectrics for Metal-Insulator-Metal Application. (Invited), vol. 41, pg. 53-61.

In: ECS Transactions (The Electrochemical Society)

  • 2011

DOI: 10.1149/1.3633654

Atomic Vapor Deposition (AVD) and Atomic Layer Deposition (ALD) techniques were successfully applied for the depositions of perovskite type dielectrics, namely, Sr-Ta-O, Ti-Ta-O, Sr-Ti-O, Ba-Hf-O, Nb-Ta-O and Ce-Al-O. Thin films were investigated as alternative dielectrics for Metal-Insulator-Insulator (MIM) capacitors. Structural and electrical properties are investigated after depositing the metal oxides on 200 mm TiN/Si (100) substrates within the temperature range of 225-400 ºC. Electrical properties, investigated after sputtering Au top electrodes, revealed that the main characteristics are different for each dielectric. The highest dielectric constants were achieved for crystalline SrTiO3 (k=95), crystalline CeAlO3 (k = 60) and amorphous Ti-Ta-O (k = 50) films. However, Sr-Ta-O based MIM capacitors showed the lowest leakage current densities as well as the smallest capacitancevoltage linearity coefficients.
  • TC Teisnach Sensorik
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  • NACHHALTIG
Zeitschriftenartikel
  • M. Lukosius
  • C. Baristiran Kaynak
  • A. Abrutis
  • M. Skapas
  • V. Kubilius
  • A. Zauner
  • Günther Ruhl
  • C. Wenger
Metal-insulator-metal capacitors with MOCVD grown Ce-Al-O as dielectric, vol. 88, pg. 1529-1532.

In: Microelectronic Engineering

  • 2011

DOI: 10.1016/j.mee.2011.03.044

Ce–Al–O thin films were prepared on 70 nm TiN/Si(1 0 0) substrates by pulsed injection metal organic chemical vapor deposition (PI-MOCVD) for metal–insulator–metal (MIM) applications. Depositions were carried out at 400 °C using two separate Ce and Al precursors. In order to get Ce–Al–O films with different stoichiometry, Al2O3 and CeO2 were mixed with different Ce:Al precursors’ ratios. According to the XRD analysis, the as deposited films were amorphous if more aluminum was injected than cerium, and crystalline – if they are cerium rich. Electrical properties have been investigated in MIM capacitors after e-beam evaporation of Au top electrodes. Oxides possess a dielectric constant of 10–20 in combination with leakage current densities as low as 10−5 A/cm2 at −2 V. The post deposition annealing (PDA) at 600 °C and 850 °C in N2 for 5 min lead to the diffusion of Ti from TiN bottom electrode and formation of the rutile TiO2 phase. Nevertheless, CeAlO3 films were obtained if the ratio of injected Ce:Al was 1:1. The k values increased to 60 in this case, but the leakage current density worsened to 10−3 A/cm2 at −2 V.
  • TC Teisnach Sensorik
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  • NACHHALTIG
Zeitschriftenartikel
  • C. Baristiran Kaynak
  • M. Lukosius
  • I. Costina
  • B. Tillack
  • C. Wenger
  • Günther Ruhl
  • T. Blomberg
Enhanced leakage current behavior of Sr2Ta2O7-x/SrTiO3 bilayer dielectrics for metal-insulator-metal capacitors, vol. 519, pg. 5734-5739.

In: Thin Solid Films

  • 2011

DOI: 10.1016/j.tsf.2011.01.001

Metal–Insulator–Metal (MIM) capacitors are one of the most essential components of radio frequency devices and analog/mixed-signal integrated circuits. In order to obtain high capacitance densities in MIM devices, high-k materials have been considered to be promising candidates to replace the traditional insulators. The challenging point is that the dielectric material must demonstrate high capacitance density values with low leakage current densities. In this work, SrTiO3 based MIM capacitors have been investigated and the electrical performance of the devices have been optimized by using bilayered systems of Sr2Ta2O7−x/SrTiO3 with different thicknesses of Sr2Ta2O7−x. Sputtering X-Ray photoelectron spectroscopy (XPS) measurements have been applied to investigate the interfaces between the thin film constituents of the MIM stacks. The optimized bilayered system provides a leakage current density of 8∗10− 8 A/cm2 at 2 V (bottom electrode injection) and a high capacitance density of 13 fF/μm2.
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
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Zeitschriftenartikel
  • T. Blomberg
  • C. Wenger
  • C. Baristiran Kaynak
  • Günther Ruhl
  • P. Baumann
ALD grown NbTaOx based MIM capacitors, vol. 88, pg. 2447-2451.

In: Microelectronic Engineering

  • 2011
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Vortrag
  • Günther Ruhl
From Graphite to Graphene. Eingeladener Vortrag

In: Infineon R&D Colloquium

  • 2011
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Zeitschriftenartikel
  • M. Lukosius
  • C. Baristiran Kaynak
  • C. Wenger
  • Günther Ruhl
  • S. Rushworth
  • P. Baumann
Atomic Vapor Depositions of Ti–Ta–O thin films for Metal–Insulator–Metal applications, vol. 519, pg. 3831-3834.

In: Thin Solid Films

  • 2011

DOI: 10.1016/j.tsf.2011.01.239

Atomic Vapor Deposition technique was applied for the depositions of Ti–Ta–O oxide films for Metal–Insulator–Metal capacitors used in back-end of line for Radio Frequency applications. Composition, crystallinity, thermal stability and electrical properties were studied. Ti–Ta–O films, with the ratio of Ta/Ti ~ 1.5, deposited at 400 °C on TiN electrodes, were amorphous and possessed a dielectric constant of 50 with low voltage linearity coefficients and leakage currents densities as low as 10− 7 A/cm2 at 1 V. The films, deposited on Si wafers, were amorphous up to the annealing temperature of 700 °C and crystallized in orthorhombic Ta2O5 phase at higher temperatures.
  • TC Teisnach Sensorik
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  • NACHHALTIG
Zeitschriftenartikel
  • M. Lukosius
  • C. Baristiran Kaynak
  • C. Wenger
  • Günther Ruhl
  • S. Rushworth
Electrical characteristics of Ti-Ta-O based MIM capacitors, vol. 29, pg. 01AC01.

In: Journal of Vacuum Science & Technology B

  • 2011

DOI: 10.1116/1.3534020

Amorphous Ti–Ta–O thin films were deposited by the atomic-vapor deposition technique for metal-insulator-metal (MIM) applications. Depositions were carried out at 400 °C on 200-mm Si (100) wafers using TiN and TaN as bottom electrode materials. The comparison of electrical properties of MIM capacitors was done after physical-vapor deposited growth of different top electrodes, namely, Au, TiN, TaN, and Ti. Capacitance-voltage measurements revealed that the dielectric constant of 50 can be reached if Ti–Ta–O layers are deposited on TiN and if Au, TaN, or Ti is used as the top electrode. The k value is reduced to 37 if TaN is used as bottom electrode. However, if TiN is used as the top electrode, the k value of the stack is reduced by a factor of 3, from 50 to 17, independent of whether TiN or TaN are used as bottom electrodes. The lowest leakage current values (∼10−8 A/cm2) were observed when gold was used as the top electrode, whereas it increased by 3 orders of magnitude if the top electrode was changed to TiN and even more if the top electrode was changed to TaN or Ti.
  • TC Teisnach Sensorik
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Patent
  • M. Hammer
  • Günther Ruhl
  • A. Strasser
  • M. Melzl
  • R. Goellner
  • D. Groteloh
Method of processing a contact pad, method of manufacturing a contact pad, and integrated circuit element
  • 2010
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Zeitschriftenartikel
  • C. Baristiran Kaynak
  • M. Lukosius
  • I. Costina
  • B. Tillack
  • C. Wenger
  • Günther Ruhl
  • S. Rushworth
Investigations of thermal annealing effects on electrical and structural properties of SrTaO based MIM capacitor, vol. 87, pg. 2561-2564.

In: Microelectronic Engineering

  • 2010

DOI: 10.1016/j.mee.2010.07.015

The annealing effects on dielectric and electrode materials in Ti/SrTaO/TaN/TiN/Ti/Si metal–insulator–metal (MIM) capacitors were studied. The electrical and structural properties were investigated after subjecting the samples to annealing temperatures of 500 °C, 700 °C and 900 °C. The electrical results revealed that the dielectric constant (k value) of Sr–Ta–O increased from 18 to 50 with increasing annealing temperature. This improvement in k value can be associated to the crystallization of dielectric layer. However, the leakage current density increased several orders of magnitudes with increase of the annealing temperatures. This observation was attributed to crystallization of dielectric, degradation of TaN electrode and out-diffusion of Si from the substrate.
  • TC Teisnach Sensorik
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Vortrag
  • Günther Ruhl
  • A. Brandl
  • A. Lechner
Analysis of Cu oxide films on Cu by Raman spectroscopy. Eingeladener Vortrag

In: GMM Fachgruppentagung Analytik

  • 2010
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Patent
  • Günther Ruhl
  • M. Hammer
  • R. Kainzbauer
System for separation of an electrically conductive connection
  • 2010
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Beitrag (Sammelband oder Tagungsband)
  • Günther Ruhl
  • M. Krenzer
  • J.-M. Batke
Development of a TiN-CVD process with very high step coverage, pg. 33-37.
  • 2009

DOI: 10.1109/ASMC.2009.5155948

Current high-aspect ratio devices require deposition processes for conducting barrier and electrode films in vias and trenches with increasingly high aspect ratios. In this work we studied the extension of a CVD-TiN process based on the thermal deposition from TDEAT and NH3 in combination with subsequent plasma treatment. We investigated the process parameter space (including deposition temperature, pressure, NH3/TDEAT ratio and total gas flow) applying a DoE with respect to step coverage, deposition rate and electrical resistivity. One challenge is the quantitative determination of step coverage, which we overcame by using mapping Auger Electron Spectroscopy.
  • TC Teisnach Sensorik
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Vortrag
  • Günther Ruhl
  • M. Krenzer
  • J.-M. Batke
Investigation of CVD-TiN layers for high aspect ratios. Eingeladener Vortrag

In: GMM Fachgruppentagung PVD/CVD

  • 2009
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Zeitschriftenartikel
  • C. Wenger
  • M. Lukosius
  • H.-J. Müssig
  • Günther Ruhl
  • S. Pasko
  • C. Lohe
Influence of the electrode material on HfO2 metal-insulator-metal capacitors, vol. 27, pg. 286-289.

In: Journal of Vacuum Science & Technology B

  • 2009

DOI: 10.1116/1.3071843

TaN and TiN are investigated as bottom electrode materials for metal-insulator-metal (MIM) capacitor applications. Atomic vapor deposited HfO2 films are used as high-k dielectric. The influence of the interfacial layer between HfO2 and the bottom electrode on the electrical performance of MIM capacitors is evaluated. The capacitance density as well as the capacitance voltage linearity of high-k MIM capacitors is affected by the electrode material. There is also an impact by TaN and TiN on leakage current density and breakdown strength of the devices.
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
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Zeitschriftenartikel
  • G. Roeder
  • C. Manke
  • P. Baumann
  • S. Petersen
  • V. Yanev
  • A. Gschwandtner
  • Günther Ruhl
  • P. Petrik
  • M. Schellenberger
  • L. Pfitzner
  • H. Ryssel
Characterization of Ru and RuO2 thin films prepared by pulsed metal organic chemical vapor deposition, vol. 5, pg. 1231-1234.

In: Current Topics in Solid State Physics

  • 2008

DOI: 10.1002/pssc.200777865

Ultra‐thin ruthenium (Ru) layers were fabricated by pulsed metal organic chemical vapor deposition in an Aixtron Tricent reactor using a metal‐organic Ru precursor. Layer deposition was performed on different metal barrier combinations and on Al2O3 dielectric layers used in the fabrication of advanced Metal‐Insulator‐Metal (MIM) capacitor structures and on thermal SiO2 as reference structure. Ru layers with a thickness of 10 nm were characterized by Spectroscopic Ellipsometry (SE) and additional reference methods such as Transmission Electron Microscopy (TEM), Atomic Force Microscopy (AFM), and X‐Ray Reflectometry (XRR). As deposited and in situ annealed Ru layers were characterized by SE applying Drude‐Lorentz‐ and Effective Medium Approximation (EMA) models. It was shown that the deposited layers consist of a Ru‐RuO2 bilayer structure. By in situ annealing, the RuO2 layer thickness is reduced and highly pure Ru films are obtained. On the metal barriers the formation of a metal oxide interface, which is related to the deposition process, was determined.
  • TC Teisnach Sensorik
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Patent
  • F. Erber
  • B. Schönherr
  • T. Lutz
  • C. Ebi
  • Günther Ruhl
  • T. Franke
  • F. Gans
Verfahren zur Kompensation von Streu-/Reflexionseffekten in der Teilchenstrahllithographie
  • 2006
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Patent
  • J. Mathuni
  • Günther Ruhl
Process for the plasma etching of materials not containing silicon
  • 2006
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Patent
  • C. Ebi
  • F. Erber
  • T. Franke
  • F. Gans
  • T. Lutz
  • Günther Ruhl
  • B. Schönherr
Method for compensating for scatter/reflection effects in particle beam lithography
  • 2005
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Patent
  • J. Mathuni
  • Günther Ruhl
Production method for a halftone phase mask
  • 2005
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Patent
  • J. Mathuni
  • Günther Ruhl
Verfahren zur Seitenwandpassivierung beim Plasmaätzen
  • 2005
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Patent
  • Günther Ruhl
  • G. Prechtl
  • W. Sabisch
  • A. Kersch
  • P. Nesladek
  • F. Gans
  • R. Anderson
Kompensationsrahmen zur Aufnahme eines Substrats
  • 2004
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Zeitschriftenartikel
  • F. Letzkus
  • J. Butschke
  • M. Irmscher
  • F.-M. Kamm
  • C. Koepernik
  • J. Mathuni
  • J. Rau
  • Günther Ruhl
Dry etch processes for the fabrication of EUV masks, vol. 73-74, pg. 282-288.

In: Microelectronic Engineering

  • 2004

DOI: 10.1016/j.mee.2004.02.054

The absorber and buffer etching is a crucial step in the manufacture of EUV masks due to the stringent CD and reflectance requirements. Plasma etching of Cr layers, usually applied as an absorber for conventional masks, induces a resolution-limiting line width reduction. Therefore, new absorber materials for extreme ultraviolet lithography (EUVL) masks have to be evaluated. We investigated the etching behaviour of two different layer materials, TaN-I and TaN-II. Dense lines and contact holes down to 100 nm have been realized and an etch bias ⩽+5 nm per feature has been measured. The CD uniformity of lithography and absorber patterning was about 10 nm total range. In addition, etching processes for two different buffer materials, Cr and SiO2, have been developed. These dry etch processes for buffer and absorber layer etching have been successfully applied for EUV test mask fabrication. First results of reflectance measurements of patterned masks showed only a minimal reflectance loss due to mask making of ⩽1%.
  • TC Teisnach Sensorik
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Beitrag (Sammelband oder Tagungsband)
  • P. Nesladek
  • Günther Ruhl
  • M. Kristlib
Investigation of Cr chamber conditioning, pg. 151 f..

In: EMC 2004: 20th European Mask Conference on Mask Technology for Integrated Circuits and Micro-Components ; lectures held at the GMM-Conference, January 12-14, 2004 in Dresden, Germany. null (GMM-Fachbericht)

  • 2004
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Patent
  • J. Mathuni
  • Günther Ruhl
Verfahren und Vorrichtung zum Entlacken eines Bereiches auf einem Maskensubstrat
  • 2004
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Patent
  • Günther Ruhl
  • N. Falk
Plasma-etching process for molybdenum silicon nitride layers on half-tone phase masks based on gas mixtures containing monofluoromethane and oxygen
  • 2004
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Beitrag (Sammelband oder Tagungsband)
  • J. Mathuni
  • J. Rau
  • F.-M. Kamm
  • Günther Ruhl
  • C. Holfeld
  • F. Letzkus
  • C. Koepernik
  • J. Butschke
Optimized processes and absorber-stack materials for EUV masks,, pg. 131 f..

In: EMC 2004: 20th European Mask Conference on Mask Technology for Integrated Circuits and Micro-Components ; lectures held at the GMM-Conference, January 12-14, 2004 in Dresden, Germany. null (GMM-Fachbericht)

  • 2004
  • TC Teisnach Sensorik
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  • NACHHALTIG
Beitrag (Sammelband oder Tagungsband)
  • E. Cotte
  • C. Holfeld
  • U. Dersch
  • Günther Ruhl
  • J. Perlich
Numerical and experimental study of oxide growth on EUV mask capping layers, pg. 751-761.

In: 24th Annual BACUS Symposium on Photomask Technology (14-17 September, 2004, Monterey, California, USA). null (SPIE proceedings series)

  • 2004

DOI: 10.1117/12.569276

The interface roughness of EUV mask multilayers was taken into account for the numerical calculation of blank reflectance, and models for the growth of oxide on Si capping layers were proposed and evaluated. The simulations were then checked and validated with reflectometry measurements at different steps of the mask blank processing as well as for various angles of incidence, and ellipsometry data on layer thickness. The benchmarked models made it possible to characterize EUV mask blank Mo/Si multilayers (period, thickness ratio, number of bilayers), as well as Si capping layers and native oxide layers from reflectivity measurements. This enabled the study, via a combination of experiments and simulations, of the growth of SiO2 layers, bringing deeper understanding into this phenomenon. Finally, the simulations were used to more properly optimize multilayers and quantify the influence of the exposure tool illumination numerical aperture. Having successfully matched reflectivity data around the actinic wavelength, it was also possible to extend the models to inspection wavelengths in order to predict inspection contrast values.
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Beitrag (Sammelband oder Tagungsband)
  • Günther Ruhl
  • J. Mathuni
  • D. Knobloch
  • F.-M. Kamm
  • J. Rau
  • F. Letzkus
  • R. Springer
Development of a plasma etch process for TaN absorber patterning on EUV masks, pg. 1014-1025.

In: Proceedings of Photomask and Next-Generation Lithography Mask Technology X (16-18 April 2003, Yokohama, Japan). null (SPIE proceedings series)

  • 2003

DOI: 10.1117/12.504243

EUV mask technology poses many new challenges on mask manufacturing processes. One crucial manufacturing step is the patterning of the EUV absorber. Although in the first concepts a Chromium film is used as absorber, increasing demands for shrinking feature sizes will run Chromium out of steam. Due to the necessary oxygen content of the chromium etch plasma and the isotropic etch mechanism for chromium an etch bias of several 10 nm occurs. This results in limitations for the minimal feature size, for which reason a new absorber material has to be developed. The most promising candidate is Tantalum Nitride TaN, which in contrast to the isotropic Cr-etch process, gives the possibility of applying a more anisotropic etch utilizing higher ion energies and sidewall passivation. In this work a plasma etch process for TaN masked with positive CAR resist was developed on masks including a SiO2 buffer layer. Before running the experiments for process characterization, an endpoint detection solution by OES for very small open areas was developed utilizing principal components analysis (PCA). Additionally, an experimental matrix was set up varying bias power, source power and pressure. The DoE experiments were analyzed with respect to etch selectivities, etch bias, etch polymer formation, sidewall angle, iso-dense bias and linearity. After characterisation of the experimental results, optimized process conditions are discussed. We show that this process is capable of resolving feature sizes below 100 nm.
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Zeitschriftenartikel
  • Günther Ruhl
  • P. Nesladek
  • A. Boesl
An optimized process for dry stripping photomasks, vol. 46, pg. 103-106.

In: Solid State Technology

  • 2003
Increasingly, new photoresists and novel polymer-rich plasma etch processes used in photomask manufacturing require that conventional wet stripping must be replaced with dry plasma-stripping techniques. But these dry processes bring a whole new set of process concerns. This work optimized a microwave-plasma stripping process for the best photoresist-to-chrome oxide selectivity and photoresist etch rate, while maintaining antireflective coating integrity.
  • TC Teisnach Sensorik
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Patent
  • K. Hieber
  • T. Kruck
  • M. Schober
  • Günther Ruhl
Gasgemisch und Verfahren zum Trockenätzen von Metallen, insbesondere Kupfer, bei niedrigen Temperaturen
  • 2003
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Beitrag (Sammelband oder Tagungsband)
  • R. Anderson
  • Günther Ruhl
  • P. Nesladek
  • G. Prechtl
  • W. Sabisch
  • A. Kersch
  • M. Buie
Improvement of Chrome CDU by Optimizing Focus Ring Design, pg. 264-274.

In: Proceedings of Photomask and Next-Generation Lithography Mask Technology X (16-18 April 2003, Yokohama, Japan). null (SPIE proceedings series)

  • 2003
Uniform radical distribution in the etching plasma is essential to meet chrome critical dimension (CD) uniformity for future technology nodes on chrome masks. The Etec Systems Tetra photomask etch chamber utilizes an alumina focus ring in order to optimize the etch uniformity of the chrome mask by minimizing gas flow effects and shaping the radial distribution of the etching radicals over the mask surface. This paper describes a systematic investigation to optimize the current focus ring, in order to improve etch critical dimension uniformity. The focus ring (FR) optimization work was made possible by manufacturing a modular focus ring that allowed the geometry to be varied at different heights and diameters. The circular shape of the modular focus ring, along with the height and diameter combinations, has a large influence on the etch performance at the mask corners and edges. The underlying mechanism was investigated by modeling and simulation. Based on simulation results the focus ring geometry was varied and the optimum FR configuration was found. The critical dimension uniformity could be adjusted on uniformly patterned masks with different pattern loads to meet production specifications.
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
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Patent
  • J. Mathuni
  • Günther Ruhl
Plasmaätzverfahren für MoSi(O)N-Schichten
  • 2003
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Vortrag
  • Günther Ruhl
  • J. Mathuni
  • D. Knobloch
  • F.-M. Kamm
  • J. Rau
  • F. Letzkus
  • R. Springer
Development of a plasma etch process for TaN absorber patterning on EUV masks

In: Photomask Japan

  • 2003
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Patent
  • Günther Ruhl
  • N. Falk
Plasmaätzprozess für MoSiN-Schichten auf Halbton-Phasenmasken auf der Basis von Monofluormethan und Sauerstoff enthaltenden Gasgemischen
  • 2002
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Patent
  • T. Struck
  • Günther Ruhl
  • M. Verbeek
Verfahren und Vorrichtung zur Analyse von Strukturen einer Fotomaske
  • 2002
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Beitrag (Sammelband oder Tagungsband)
  • R. Anderson
  • Günther Ruhl
  • N. Sandlin
  • M. Buie
Study of the role of Cl2, O2, and He in the chrome etch process with optical emission spectroscopy, pg. 641-652.

In: Proceedings of the 22nd Annual BACUS Symposium on Photomask Technology (September 30-October 4, 2002; Monterey, CA, USA). null (SPIE proceedings series)

  • 2002

DOI: 10.1117/12.467849

Demands on critical dimension specifications increase with the continuous shrinking of design rules. In order to meet sub-0.13μm specifications with precise process control, a better understanding of the etching chemistry and surface reactions need to be achieved. Optical emission spectroscopy (OES) is frequently used in the photomask community as a diagnostic for calling endpoint, but is often underutilized in process development. In-situ measurements, like OES, need to be utilized and correlated to post-etch metrology measurements in order to provide a larger picture of the etch process. In this paper, OES is used to characterize and monitor chrome etch processes on the Etec Systems Tetra photomask etch chamber. Changes in process conditions, such as source power, He percentage, pressure, and Cl2:O2 flow ratios have been captured by time-averaged optical emission traces. The OES data of the plasma, along with SEM pictures of line profiles, are used to gain insight in process optimization for the etching of chrome.
  • TC Teisnach Sensorik
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Beitrag (Sammelband oder Tagungsband)
  • M. Buie
  • B. Stoehr
  • A. Buxbaum
  • Günther Ruhl
An Endpoint Solution for Photomask Chrome Loads Down to 0.25%, pg. 616-623.

In: 21th Annual BACUS Symposium on Photomask Technology (October 3-5, 2001; Monterey, CA, USA). null (Proceedings of SPIE, the International Society for Optical Engineering)

  • 2001

DOI: 10.1117/12.458342

Endpoint measurement sensitivity requirements in photomask can make or break an etch. The exposed chrome on today's photomask can vary between 0.25 percent and approximately 50 percent. Although excessive overetch does not deleteriously impact the underlying quartz, accurate endpoint detection is essential for preserving the critical dimension (CD) and CD uniformity across the mask. In order to provide a strong endpoint solution for photomask etch, a systematic investigation of etches with varying chrome loads was conducted. Passive monitoring of the optical emission spectra does not impact or interfere with the etch process. Also this method does not need specified endpoint sites on the mask as interferometric methods and provides an integrated endpoint signal over the whole mask area independent of the chrome clearing pattern. Two strong candidate wavelengths for calling endpoint in chrome etch were identified. However, optical emission spectroscopy endpoint detection has two drawbacks, which have historically limited its applicability. Firstly, the exposed area may be too low and/or secondly, the etch rate may be too slow for detection. Both of these concerns have been addressed in this paper by varying the exposed area on the photomasks from 0.25 percent to 99 percent. Endpoint was easily detected even for the slowest possible etch rate and for low exposed area.
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
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Beitrag (Sammelband oder Tagungsband)
  • Günther Ruhl
  • P. Nesladek
  • A. Boesl
Microwave plasma resist stripping for mask manufacturing, pg. 282-290.

In: Proceedings of Photomask and Next-Generation Lithography Mask Technology IX (23-25 April, 2002, Yokohama, Japan). null (SPIE proceedings series)

  • 2001

DOI: 10.1117/12.476956

Usually in photomask manufacturing, photoresists are stripped by wet processes using amineous solvents or acids. However, new photoresists and novel polymer-rich plasma etch processes in photomask manufacturing require new resist and polymer stripping techniques. The use of plasma strip processes strongly improves the stripping capability. One simple and economic solution is the microwave type reactor using oxygen plasma. As the chromium oxide antireflective coating (ARC) layer is etched in pure oxygen microwave plasma, the stripping plasma chemistry has to be modified to maintain sufficiently high selectivity towards chromium oxide. In this work a stripping process was optimized with respect to photoresist-to-chrome oxide selectivity and photoresist etch rate. The effect of the strip process on CD performance of the mask and integrity of the chromium oxide antireflective coating were investigated. Finally an endpoint detection solution was developed to optimize throughput. The described plasma stripping process proved to be fully applicable to photomask manufacturing.
  • TC Teisnach Sensorik
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Beitrag (Sammelband oder Tagungsband)
  • Y.-C. Huang
  • M. Buie
  • B. Stoehr
  • A. Buxbaum
  • Günther Ruhl
Extended Chamber Matching and Repeatability Study for Chrome Etch, pg. 624-632.

In: 21th Annual BACUS Symposium on Photomask Technology (October 3-5, 2001; Monterey, CA, USA). null (Proceedings of SPIE, the International Society for Optical Engineering)

  • 2001

DOI: 10.1117/12.458344

Shrinking design rules, optical proximity correction and advanced phase shifting techniques require new methods of photomask manufacturing. The Applied Materials Centura photomask etch chamber leverages Applied Materials' extensive etch experience to provide an innovative dry etch solution to the mask dry etch challenges for < 0.13 micrometers device generations. Repeatable, consistent, stable etch performance is critical for advanced mask manufacturing. An extended chamber matching and repeatability study for chrome etch found that stable chrome and photoresist etch rates (and therefore selectivities) are produced on the Applied Materials Centura photomask etch chamber. The etch responses are consistent mask to mask as well as chamber to chamber. Prior to the extended study, pumping efficiencies, RF source and bias calibrations and optical emission spectral responses were compared. Since the study was performed at several different sites, the metrology tools were calibrated using masks specifically designed for this purpose. The marathon testing illustrates the stable etch performance over time.
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Beitrag (Sammelband oder Tagungsband)
  • F. Erber
  • Günther Ruhl
  • R. Dietrich
  • J. Mathuni
  • P. Nesladek
Development and characterization of a new plasma etching process for mask manufacturing, pg. 401-408.

In: Proceedings of Photomask and Next Generation Lithography Mask Technology VIII (September 2001; Kanagawa, Japan). null (Proceedings of SPIE, the International Society for Optical Engineering)

  • 2001

DOI: 10.1117/12.438358

CD uniformity and CD mean to target specifications nowadays can only be accomplished by mask manufacturing process using chrome dry etch. Chrome plasma etch processes tend to show a strong dependency of the chrome etch rate and thus the etch bias on the clearfield percentage of a mask resulting in varying offtarget behavior. There are various possibilities to compensate for this loading effect. In previous work the methods of using exposure dose and development time for offtarget control were investigated. In this study we examined the capability of plasma etch parameters to be used for offtarget control. The effects of oxygen concentration, pressure and overetch percentage on etch bias and CD uniformity were experiment. Two different development processes were investigated. The resulting offtarget control model was then confirmed by running additional masks at three different clearfield percentages. Measurement results showed a high confidence level for the model predicted numbers. SEM images confirmed stable behavior of chromium sidewall angles.
  • TC Teisnach Sensorik
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Zeitschriftenartikel
  • Günther Ruhl
  • R. Dietrich
  • R. Ludwig
  • N. Falk
  • T. Morrison
  • B. Stoehr
Optimizing the Chromium Dry Etch Process, vol. 24, pg. 239-246.

In: Semiconductor International

  • 2001
A dry etch process for etching chromium-on-glass masks was developed and optimized. During optimization for minimum etch bias, a new type of metrology tool was used to measure critical dimensions and characterize the sidewall profiles of both the photoresist and the final mask structures.
  • TC Teisnach Sensorik
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Beitrag (Sammelband oder Tagungsband)
  • Günther Ruhl
  • R. Dietrich
  • R. Ludwig
  • N. Falk
  • T. Morrison
  • B. Stoehr
Chrome dry etch characterization using Surface Nano Profiling, pg. 97-107.

In: Proceedings of the 20th Annual BACUS Symposium on Photomask Technology (September 13-15, 2000; Monterey, CA, USA). null (Proceedings of SPIE, the International Society for Optical Engineering)

  • 2001

DOI: 10.1117/12.410753

In this paper we describe the development of a chrome dry etch process on a new type of mask etch tool. One crucial goal was to minimize the CD etch bias. To meet this goal, a procedure for the direct characterization of CD etch bias was developed. The common methods for measuring the CD etch bias as resist-to-chrome CD difference, such as confocal optical microscope or SEM measurement, only give correct results, if the sidewalls are identical to the calibration standard. This is normally not the case as, due to the differing step height of resist and chrome, and the fact that during process development, in particular, the sidewall shapes and angles can vary significantly. Thus, it is very important to use a CD measurement method which takes the sidewall shapes (slope, foot) into account. One novel method is the use of a Scanning Nano Profiler (SNP) which was derived from the AFM principle. In contrast to AFM the use of a special high aspect ratio tip with 90° sidewall angle, in combination with pixelwise scanning of the substrate surface, provides information about the true sidewall shape and CD.
  • TC Teisnach Sensorik
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Vortrag
  • Günther Ruhl
  • J. Mathuni
Dry Etching of Photomasks Utilizing DPS Technology. eingetragener Vortrag

In: Applied Materials Technical Seminar, Semicon West

  • 2000
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
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Beitrag (Sammelband oder Tagungsband)
  • C. Friedrich
  • L. Mader
  • A. Erdmann
  • S. List
  • R. Gordon
  • C. Kalus
  • U. Griesinger
  • R. Pforr
  • J. Mathuni
  • Günther Ruhl
  • W. Maurer
Optimising edge topograpy of alternating phase shift masks using rigorous mask modelling, pg. 1323.

In: Optical Microlithography XIII (1-3 March 2000, Santa Clara, USA). null (Proceedings of SPIE)

  • 2000
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
  • NACHHALTIG
Vortrag
  • Günther Ruhl
  • J. Hochmuth
  • T. Coleman
Control Methodology of off-target for varying pattern densities with chrome dry etch

In: 19th Annual Symposium on Photomask Technology

  • 1999
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Beitrag (Sammelband oder Tagungsband)
  • Günther Ruhl
  • J. Hochmuth
  • T. Coleman
Control Methodology of off-target for varying pattern densities with chrome dry etch, pg. 297.

In: Symposium on Photomask Technology. 15-17 September, 1999, Monterey, California (Proceedings of SPIE, the International Society for Optical Engineering)

  • 1999

DOI: 10.1117/12.373324

Critical dimension (CD) control and resolution requirements of advanced photomasks require a new class of fabrication processes. These include the use of higher contrast resists and low etch bias processes such as plasma etching for patterning chrome films. Previous work has shown that ZEP 7000 resist and ICP dry etching of chrome provide the process latitude needed to meet 180 nm mask requirements and beyond. However, due to the loading effects, the deviation of the CD from the target value is a function of the chrome loading on the plate when using dry etching. Therefore, CD control must occur by varying the exposure dose or the develop time based on the pattern loading of a particular mask level. By understanding the relationships between the change in CD with respect to dose, develop time and pattern loading, models can be created which accurately predict the required parameters to tightly control CD performance independent of dry etch loading effects. In this paper a production process is described which utilizes ZEP 7000 and ICP dry etching. A series of experiments have been run to characterize the change in CD based on both dose and develop time. Then a matrix of experiments were run to determine the effect of pattern loading on CD. A predictive model was generated from the DOE data which accurately predicts the dose and develop time needed to meet the CD targeting requirements for any given mask level regardless of pattern density. The model was then verified on production mask levels of randomly varying pattern density.
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Zeitschriftenartikel
  • H. Treichel
  • Günther Ruhl
  • P. Ansmann
  • R. Würl
  • C. Müller
  • M. Dietlmeier
Low dielectric constant materials for interlayer dielectric. (Invited Paper), vol. 40, pg. 1-19.

In: Microelectronic Engineering

  • 1998

DOI: 10.1016/S0167-9317(97)00185-8

The more advanced an integrated circuit becomes, the more stringent are the demands for certain properties of a dielectric or insulating material. In addition, it is essential that the layer maintain its specific electrical, physical and chemical properties after incorporation in the device structure and during subsequent processing. Due to temperature budget constraints and the accelerated decrease of feature sizes below 0.25 μm one can no longer rely on traditional choices but has to search for alternatives, both for low and high permittivity replacements. In the article we survey currently used low dielectric constant materials and future trends for micro-electronic applications.
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Beitrag (Sammelband oder Tagungsband)
  • D. Bollmann
  • Günther Ruhl
  • et al.
Three dimensional metallization for vertically integrated circuits, pg. 94.
  • 1997
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
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Patent
  • Günther Ruhl
  • V. Schröcke
Verfahren und Vorrichtung zur Erfassung von atomarem Wasserstoff in einem Mikroelektronik-Fertigungsreaktor
  • 1997
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Beitrag (Sammelband oder Tagungsband)
  • H. Treichel
  • Günther Ruhl
  • R. Würl
  • P. Ansmann
  • C. Müller
  • M. Dietlmeier
Dielectric Materials and Insulators for Microelectronics, pg. 1125.

In: Chemical vapor deposition. Proceedings of the fourteenth international conference and EUROCVD-11 ; [held as part of the 192nd Electrochemical Society Meeting in Paris, France, September 5-9, 1997] (Proceedings volume / Electrochemical Society)

  • 1997
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Beitrag (Sammelband oder Tagungsband)
  • H. Treichel
  • S. Seitz
  • K. Neumeier
  • Günther Ruhl
  • C. Müller
High-Temperature Resistent Devices for Energy-Efficient Automotive Applications
  • 1997
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
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Beitrag (Sammelband oder Tagungsband)
  • M. Engelhardt
  • Günther Ruhl
  • et al.
Vertically integrated circuits: A key technology for future high performance systems, pg. 187.
  • 1997
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Zeitschriftenartikel
  • P. Ramm
  • Günther Ruhl
  • et al.
Three dimensional metallization for vertically integrated circuits. (Invited Lecture), vol. 37-38, pg. 39-47.

In: Microelectronic Engineering (Materials for Advanced Metallization MAM '97; 16-19 March 1997; Villard de Lans, France)

  • 1997

DOI: 10.1016/S0167-9317(97)00092-0

  • TC Teisnach Sensorik
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Beitrag (Sammelband oder Tagungsband)
  • G. Röska
  • K. Hieber
  • Günther Ruhl
  • H. Treichel
Future Challenges in Multilevel Interconnection and Wiring
  • 1996
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
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Zeitschriftenartikel
  • Günther Ruhl
  • R. Rehmet
  • M. Knoživá
  • R. Merica
  • S. Vepřek
In situ XPS studies of the deposition of TiNxCy films from tetrakis(dimethyamido)titanium(IV) and bis[N,N'-bis(tert.-butyl)- ethylenediamido]titanium(IV), vol. 8, pg. 2712-2720.

In: Chemistry of Materials

  • 1996
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Beitrag (Sammelband oder Tagungsband)
  • G. Röska
  • K. Hieber
  • Günther Ruhl
  • H. Treichel
Metallisierung höchstintegrierter und komplexer Systeme. (Eingeladener Beitrag), pg. 1163.
  • 1996
  • TC Teisnach Sensorik
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Vortrag
  • Günther Ruhl
  • B. Fröschle
  • P. Ramm
  • A. Intemann
  • W. Pamler
Deposition of titaniumnitride/tungsten films for application in vertically integrated circuits technology

In: Materials for Advanced Metallization '95

  • 1995
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Zeitschriftenartikel
  • Günther Ruhl
  • B. Fröschle
  • P. Ramm
  • A. Intemann
  • W. Pamler
Deposition of titaniumnitride/tungsten films for application in vertically integrated circuits technology, vol. 91, pg. 382-387.

In: Applied Surface Science

  • 1995
  • TC Teisnach Sensorik
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Beitrag (Sammelband oder Tagungsband)
  • A. Intemann
  • Günther Ruhl
  • E. Hartmann
  • H. Körner
Applications and properties of MOCVD-TiN, pg. 209.
  • 1995
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Beitrag (Sammelband oder Tagungsband)
  • M. Engelhardt
  • W. Pamler
  • T. Graßl
  • Günther Ruhl
A Wafer-to-Wafer Interconnect Scheme Using Through-Hole Silicon Trench Etching and MCVD
  • 1995
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
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Beitrag (Sammelband oder Tagungsband)
  • M. Engelhardt
  • W. Pamler
  • B. Fröschle
  • T. Graßl
  • Günther Ruhl
Vertical integration of chips: a technological challenge for plasma etching and deposition
  • 1995
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  • TC Teisnach Sensorik
  • NACHHALTIG
Zeitschriftenartikel
  • M. Rückschloß
  • T. Wirschem
  • H. Tamura
  • Günther Ruhl
  • J. Oswald
  • S. Vepřek
Photoluminescence from OH-related radiative centres in silica, metal oxides, oxidized nanocrystalline and porous silicon, vol. 63, pg. 279-287.

In: Journal of Luminescence

  • 1995

DOI: 10.1016/0022-2313(94)00076-O

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Beitrag (Sammelband oder Tagungsband)
  • A. Intemann
  • Günther Ruhl
Remote Plasma Deposition of CVD Titanium Nitride Films using Organometallic Precursors
  • 1995
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Zeitschriftenartikel
  • M. Engelhardt
  • W. Pamler
  • B. Fröschle
  • T. Graßl
  • Günther Ruhl
Interchip Vias, pg. 17 ff..

In: European Semiconductor

  • 1995
  • TC Teisnach Sensorik
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Beitrag (Sammelband oder Tagungsband)
  • A. Intemann
  • H. Koerner
  • Günther Ruhl
  • K. Hieber
  • E. Hartmann
Applications and Properties of MOCVD Titanium Nitride
  • 1994
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  • NACHHALTIG
Vortrag
  • Günther Ruhl
  • K. Hieber
Trends in der Prozeßentwicklung für die Mehrlagenmetallisierung. Eingeladener Vortrag

In: Arbeitskreis Plasmaoberflächentechnologie

  • 1994
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Hochschulschrift
  • Günther Ruhl
XPS-Studien oberflächenchemischer Prozesse beim Plasmaätzen von (Mn,Zn)Ferriten und der MOCVD von TiNxCy
  • 1993
  • TC Teisnach Sensorik
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • NACHHALTIG
Beitrag (Sammelband oder Tagungsband)
  • Günther Ruhl
  • R. Rehmet
  • M. Knoživá
  • S. Vepřek
In situ XPS studies of the deposition of thin films from tetrakis(dimethylamido)titanium organometallic precursor for diffusion barriers, pg. 461.
  • 1993

DOI: 10.1557/PROC-309-461

  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
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Vortrag
  • Günther Ruhl
  • S. Vepřek
  • M.G.J.. Vepřek-Heijman
Plasmaätzen von Mangan-Zink-Ferriten

In: 4. Bundesdeutsche Fachtagung Plasmatechnologie

  • 1990
  • Angewandte Naturwissenschaften und Wirtschaftsingenieurwesen
  • TC Teisnach Sensorik
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