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Solid Platinum Nanoprobes for Highly Reliable Conductive Atomic Force Microscopy
In: ACS Applied Materials & Interfaces vol. 15 pg. 21602-21608.
W nano-fuzz growth by high-flux He ion irradiation with their energy above 300 eV
In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms vol. 520 pg. 22-28.
DOI: 10.1016/j.nimb.2022.04.002
Investigation of Heater Structures for Thermal Conductivity Measurements of SiO2 and Al2O3 Thin Films Using the 3-Omega Method
In: Nanomaterials vol. 12
DOI: 10.3390/nano12111928
Developing a micro-thermography system for thermal characterization of LED packages
In: Microelectronic Engineering vol. 254 pg. 111694.
DOI: 10.1016/j.mee.2021.111694
Advances in combined mechanical and electrical SPM characterization of thin films.
In: Nanobrücken 2022 - A Nanomechanical Testing Conference and Bruker User Meeting
Prag, Tschechische Republik
Advances in Combined Mechanical and Electrical SPM Characterization of Thin Films . Poster presentation
In: Nanobrücken 2022: Nanomechanical Testing Conference
Charles University Prague Prague, Czech Republic
The heat flux and temperature distribution of W fuzz layers under fusion-relevant He/D ion irradiations
In: Journal of Nuclear Materials vol. 557 pg. 153319.
DOI: 10.1016/j.jnucmat.2021.153319
Effect of temperature on the growth and surface bursting of He nano-bubbles in W under fusion-relevant He ion irradiations
In: Fusion Engineering and Design vol. 163 pg. 112159.
DOI: 10.1016/j.fusengdes.2020.112159
Thermoreflectance Imaging neu gedacht. Eine günstige Alternative zur Ermittlung der thermischen Leitfähigkeit
In: WILEY GIT Labor-Fachzeitschrift
Modeling W fuzz growth over polycrystalline W due to He ion irradiations at an elevated temperature
In: Journal of Nuclear Materials vol. 550 pg. 152917.
DOI: 10.1016/j.jnucmat.2021.152917
Scanning Thermal Microscopy of Ultrathin Films: Numerical Studies Regarding Cantilever Displacement, Thermal Contact Areas, Heat Fluxes, and Heat Distribution
In: Nanomaterials vol. 11 pg. 491.
DOI: 10.3390/nano11020491
He nanobubble driven W surface growth during low-energy He ion irradiations
In: Journal of Nuclear Materials vol. 554 pg. 153073.
DOI: 10.1016/j.jnucmat.2021.153073
Thermo reflectance imaging re-imagined. A low-cost alternative for determining thermal conductivity
In: Wiley Analytical Science
W fuzz layers: very high resistance to sputtering under fusion-relevant He + irradiations
In: Plasma Science & Technology vol. 24 pg. 015601.
The effect of fusion-relevant He ion flux on the evolution of He nano-bubbles in W
In: Plasma Physics and Controlled Fusion vol. 62 pg. 065002.
Tensile stress-driven cracking of W fuzz over W crystal under fusion-relevant He ion irradiations
In: Nuclear Fusion vol. 60 pg. 046011.
On the Limits of Scanning Thermal Microscopy of Ultrathin Films
In: Materials vol. 13 pg. 518.
DOI: 10.3390/ma13030518
Thermal conductivity measurements of thin films using 3ω method
In: 7. Tag der Forschung
Deggendorf
Thermal characterization of thin films using FEM simulations
In: 7. Tag der Forschung
Deggendorf
Effect of intermittent He/D ion irradiations on W nano-fuzz growth over W targets
In: Vacuum vol. 173 pg. 109146.
DOI: 10.1016/j.vacuum.2019.109146
Recent Trends in Characterization of Nanoelectronic Materials and Devices with Scanning Probe Microscopy . Invited Talk
In: NanoScientific Symposium China - Scanning Probe Microscopy (SPM)
Virtual Conference
Mass loss of pure W, W-Re alloys, and oxide dispersed W under ITER-relevant He ion irradiations
In: Journal of Nuclear Materials vol. 527 pg. 151800.
DOI: 10.1016/j.jnucmat.2019.151800
Thermische Charakterisierung ultradünner Schichten
pg. 138-141.
Deggendorf
Understanding Current Instabilities in Conductive Atomic Force Microscopy
In: Materials vol. 12 pg. E459.
DOI: 10.3390/ma12030459
The evolution of He nanobubbles in tungsten under fusion-relevant He ion irradiation conditions
In: Nuclear Fusion vol. 59 pg. 086025.
The effect of O2 impurity on surface morphology of polycrystalline W during low-energy and high-flux He+ irradiation
In: Fusion Engineering and Design vol. 139 pg. 96-103.
DOI: 10.1016/j.fusengdes.2019.01.003
In Situ Observation of Current Generation in ZnO Nanowire Based Nanogenerators Using a CAFM Integrated into an SEM
In: ACS Applied Materials & Interfaces vol. 11 pg. 15183-15188.
Temperature dependent investigation of hexagonal boron nitride films using scanning thermal microscopy . Poster presentation
In: 6th Nano Today Conference 2019
Elsevier Lisbon, Portugal
Surface damages of polycrystalline W and La2O3-doped W induced by high-flux He plasma irradiation
In: Journal of Nuclear Materials vol. 501 pg. 275-281.
Surface diffusion and growth of W self-interstitials during low-energy and large-flux H/He ion irridiations of polycrystalline W
In: International Conference on Plasma Surface Interactions in Controlled Fusion Devices
Princeton University, NJ, USA
Advances in Electrical and Thermal Characterization of Surfaces and Thin Films . Invited Talk
In: 4th Ed. Smart Materials and Surfaces - SMS Conference 2018
Venedig, Italien
Evaluation of Topography effects of SThM Measurements on Thin Thermoelectric Films . Poster
In: 4th Ed. Smart Materials and Surfaces - SMS Conference 2018
Venedig, Italien
Nanoscale thermal properties of next generation transparent/flexible thermoelectric copper iodide films . Posterpräsentation
In: 5. Tag der Forschung
Technische Hochschule Deggendorf Deggendorf
On the Limits of Scalpel AFM for the 3D Electrical Characterization of Nanomaterials
In: Advanced Functional Materials vol. 28 pg. 1802266.
Protective nanometer films for reliable Cu-Cu connections . Invited Talk
In: IEEE International Reliability Physics Symposium (IRPS)
San Francisco, CA, USA
Protective nanometer films for reliable Cu-Cu connections
In: Microelectronics Reliability vol. 76-77 pg. 383-389.
DOI: 10.1016/j.microrel.2017.07.001
Protective nanometer films for reliable Cu-Cu connections . Best Paper Award
Nanoscale thermal properties of next generation transparent/flexible thermoelectric copper iodide films . Posterpräsentation
In: 5th Nano Today Conference
Hawaii, USA
Transparent flexible thermoelectric material based on non-toxic earth-abundant p-type copper iodide thin film
In: nature COMMUNICATIONS pg. 1-7.
DOI: 10.1038/ncomms16076
Chapter 3: Fundamentals of CAFM Operation Modes
pg. 45-78.
Weinheim
Numerical Study of Hydrodynamic Forces for AFM Operations in Liquid Scanning (Article ID 6286595, 12 pages)
In: Scanning pg. 1-12.
DOI: 10.1155/2017/6286595
Fabrication of scalable and ultra low power photodetectors with high light/dark current ratios using polycrystalline monolayer MoS2 sheets
In: Nano Energy vol. 30 pg. 494-502.
DOI: 10.1016/j.nanoen.2016.10.032
High-flux He+ irradiation effects on surface damages of tungsten under ITER relevant conditions
In: Journal of Nuclear Materials vol. 471 pg. 1-7.
DOI: 10.1016/j.jnucmat.2016.01.001
Surface degeneration of W crystal irradiated with low-energy hydrogen ions
In: Scientific Reports (Nature Publishing Group) vol. 6
DOI: 10.1038/srep23738
Characterization of the photocurrents generated by the laser of atomic force microscopes
In: Review of Scientific Instruments vol. 87 pg. 083703.
DOI: 10.1063/1.4960597
Nanoscale electrical conductivity of laser-sintered Ge nanoparticle layers
In: The 8th International Conference On Technological Advances Of Thin Films and Surface Coatings (ThinFilms 2016)
Singapur, Singapur
Nanoscale characterization of laser-sintered Ge nanoparticle layers
In: 2nd International Conference on Functional Integrated nano Systems (nanoFIS)
Graz, Österreich
Ordered arrangement of irradiation-induced defects of polycrystalline tungsten irradiated with low-energy hydrogen ions
In: Journal of Nuclear Materials vol. 464 pg. 216-220.
Atomic Force Microscopy analysis of laser-sintered Germanium nanoparticles for thermoelectric applications
In: 3rd International Congress on Energy Efficiency and Energy Related Materials (ENEFM)
Oludeniz, Türkei
Differential 3ω method for measuring thermal conductivity of AIN and SI3N4 thin films
In: Thin Solid Films vol. 591 Part B pg. 267-270.
DOI: 10.1016/j.tsf.2015.03.031
Nanoscale characterization of CH3-terminated Self-Assembled Monolayer on copper by advanced scanning probe microscopy techniques
In: Applied Surface Science vol. 356 pg. 921-926.
DOI: 10.1016/j.apsusc.2015.08.182
Nanostructured fuzz growth on tungsten under low-energy and high-flux He irradiation
In: Scientific Reports (Nature Publishing Group) vol. 5 pg. 1-9.
DOI: 10.1038/srep10959
Nanoscale characterization of copper oxide films by Kelvin Probe Force Microscopy
In: Thin Solid Films vol. 584 pg. 310-315.
DOI: 10.1016/j.tsf.2015.01.071
A review of physical characterization methods for nanostructured thermoelectric materials . Invited Talk
In: 3rd International Congress on Energy Efficiency and Energy Related Materials (ENEFM)
Oludeniz, Türkei
Use of Coated-Metal Particles in Rear Busbar Pastes to Reduce Silver Consumption
In: IEEE Journal of Photovoltaics vol. 5 pg. 534-537.
DOI: 10.1109/JPHOTOV.2014.2388080
Selected Atomic Force Microscopy Methods for the Electrical Characterization of Thin Films and Devices . Invited Talk
In: 4th International Advances in Applied Physics and Materials Science Congress & Exhibition (APMAS)
Fethiye, Türkei
Characterization of Self-Assembled Monolayers on Copper by Scanning Probe Microscopy
In: 16th International Conference on Thin Films (ICTF16)
Dubrovnik, Kroatien
The differential 3ω method for measuring the thermal conductivity of AIN and SI3N4 thin films
In: 16th International Conference on Thin Films (ICTF16)
Dubrovnik, Kroatien
Nanoscale copper oxide characterization with Kelvin Probe Force Microscopy . Posterpräsentation
In: The 7th International Conference on Technological Advances of Thin Films & Surface Coatings (THINFILMS2014)
Chongquing, China
Determining the thermal conductivity of thin layers with the macroscopic 3ω method
In: Applied Research Conference (ARC)
Technische Hochschule Deggendorf Deggendorf
Scanning probe microscopy based electrical characterization of thin dielectric and organic semiconductor films
In: Microelectronics Reliability vol. 53 pg. 1430-1433.
Analysis of crystal defects on GaN based semiconductors with advanced scanning probe microscope technique
In: Thin Solid Films vol. 544 pg. 139-143.
Raster-Sonden-Mikroskopie . Analyseverfahren für die Halbleiterelektronik
In: Elektrotechnik und Elektronik in Bayern. Sonderteil Sensorik (Zukunftstechnologien in Bayern) pg. 10-16.
München
Scanning probe microscopy based electrical characterization of thin dielectric and organic semiconductor films
In: 24th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)
Arcachon, Frankreich
Characteristics of diode laser structures on silicon substrates based on the Ga(NAsP)/(BGa)(AsP) materials combination
In: Photonics West
San Francisco, CA, USA
Analysis of copper oxide films by combined scanning microscopy
In: 6th International Conference on Technological Advances of Thin Films & Surface Coatings (THINFILMS2012)
Singapur, Singapur
Analysis of crystal defects on GaN-based semiconductors with advanced scanning probe microscope techniques . Invited Talk
In: 6th International Conference on Technological Advances of Thin Films & Surface Coatings (THINFILMS2012)
Singapur, Singapur
Degradation of polycrystalline HfO2 based gate dielectrics under nanoscale electrical stress
In: Applied Physics Letters vol. 99 pg. 103510.
Conductivity and Charge Trapping After Electrical Stress in Amorphous and Polycrystalline Al2O3-Based Devices Studied With AFM-Related Techniques
In: IEEE Transactions on Nanotechnology vol. 10 pg. 344-351.
Nanoscale and Device Level Gate Conduction Variability of High-k Dielectrics-Based Metal-Oxide-Semiconductor Structures
In: IEEE Transactions on Device and Materials Reliability vol. 11 pg. 495-501.
DOI: 10.1109/TDMR.2011.2161087
Reliability and gate conduction variability of HfO2-based MOS devices: A combined nanoscale and device level study
In: Microelectronic Engineering vol. 88 pg. 1334-1337.
Novel Scanning Capacitance Microscopy Techniques for Device and Thin Film Characterization
Dalian Nationalities University Dalian, China
New Trends in Electrical Scanning Probe Microscopy Techniques for Device and Thin Film Characterization
Beijing University Peking, China
Capacitance and Conductivity Mapping of Organic Films and Devices with Non-Contact SPM Methods
In: International Workshop on Scanning Probe Microscopy for Energy Applications
Max Planck Institute for Polymer Research Mainz
Method and apparatus for two-dimensional profiling of doping profiles of a material sample with scanning capacitance microscope
Intermittent-Contact Scanning Capacitance Analysis of Thin Dielectric Films and Semiconductor Devices . Invited Talk
In: 5th International Conference on Technological Advances of Thin Films & Surface Coatings
Harbin, China
Displacement Current Sensor for two-dimensional dopant profiling
In: ITG Discussion
Grainau
Comparison of fluorocarbon film deposition by pulsed/continuous wave and downstream radio frequency plasmas
In: Vacuum vol. 85 pg. 253-262.
Plasma-assisted chemical vapor deposition of titanium oxide films by dielectric barrier discharge . Submitted Article
In: Thin Solid Films
Intermittent-Contact Capacitance Spectroscopy – A new method for determining C(V) curves with sub-micron lateral resolution
In: Microelectronics Reliability vol. 50 pg. 1511-1513.
Crystallization and silicon diffusion nanoscale effects on the electrical properties of Al2O3 based devices
In: Microelectronic Engineering vol. 86 pg. 1921-1924.
Crystallization and Silicon Diffusion Nanoscale Effects on the Electrical Properties of Al2O3 Based Devices
In: Conference of Insulating Films on semiconductors (INFOS 2009)
Cambridge, Großbritannien
Displacement current sensor for contact and intermittent contact scanning capacitance microscopy
In: Microelectronics Reliability vol. 49 pg. 1192-1195.
A Review of Advanced Scanning Probe Microscope Analysis of Functional Films and Semiconductor Devices
In: Thin Solid Films vol. 517 pg. 5100-5105.
Surface properties of silicon oxide films deposited using low pressure dielectric discharge
In: Applied Surface Science vol. 255 pg. 7708-7712.
A Review of Advanced Scanning Probe Microscope Analysis of Functional Films and Semiconductor Devices . Invited Talk
In: Thin Films
Singapur
Intermittent-contact scanning capacitance microscopy versus contact mode SCM applied to 2D dopant profiling
In: Microelectronics Reliability vol. 48 (8-9) pg. 1339-1349.
Scanning Probe Microscopy: Analyses for Opto Semiconductors and Outlook
In: Science & Coffee
Osram OS Regensburg
Raster-Sonden-Mikroskopie an Laser Heterostrukturen
In: BMBF / VDI Fachprogramm „Optische Technologien“, Kick-Off Meeting
Regensburg
Combined AFM-SEM Study of the Diamond Nucleation Layer on Ir(001)
In: Diamond and Related Materials vol. 16 pg. 665-670.
Advanced Methods in Scanning Probe Microscopy (SPM)
Dalian Nationalities University Dalian, China
C-AFM-based thickness determination of thin and ultra-thin SiO2 films by use of different conductive-coated probe tips
In: Applied Surface Science vol. 253 pg. 3615-3626.
Influence of the manufacturing process on the electrical properties of thin (< 4 nm) Hafnium based high-k stacks observed with CAFM
In: Microelectronics Reliability vol. 47 pg. 1424-1428.
Influence of the manufacturing process on the electrical properties of thin (< 4 nm) Hafnium based high-k stacks observed with CAFM
In: 18th European Symposium on Reliability of Electronic Devices, Failure Physics and Analysis (ESREF)
Arcachon, Frankreich
Kelvin Probe Force Microscopy – An appropriate tool for the electrical characterisation of LED heterostructures
In: Microelectronics Reliability vol. 46 pg. 1736-1740.
Thickness determination of thin and ultra-thin SiO2 films by C-AFM IV-spectroscopy
In: Applied Surface Science vol. 252 pg. 2375-2388.
Properties and deposition processes of a-C: H films from CH4/Ar dielectric barrier discharge plasmas
In: Surface & Coatings Technology vol. 200 pg. 5819-5822.
Surface and electron emission properties of hydrogen-free diamond-like carbon films investigated by atomic force microscopy
In: Materials Science & Engineering A vol. 426 pg. 114-120.
Kelvin Probe Force Microscopy – An appropriate tool for the electrical characterisation of LED heterostructures
In: 17th European Symposium - Reliability of Electron Devices, Failure Physics and Analysis (ESREF) 2006
Wuppertal
Nanoscale electron field emissions from the bare, hydrogenated and graphite-like layer covered tetrahedral amorphous carbon films
In: Journal of Applied Physics vol. 99 pg. 044303-044303-8.
DOI: 10.1063/1.2171806
Kelvin Probe Force Microscopy – An appropriate tool for the electrical characterisation of LED heterostructures
In: Nanotech Northern Europe
Helsinki, Finnland
Intermittent contact scanning capacitance microscopy – An improved method for 2D doping profiling
In: Nanotech Northern Europe
Helsinki, Finnland
Combined AFM-SEM Study of the Diamond Nucleation Layer on Ir(001)
In: 17th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes and Nitrides
Estoril, Portugal
Raster-Sonden-Mikroskopie (SPM) in der Fehler- und Zuverlässigkeitsanalytik
In: VDE Fehlermechanismen bei kleinen Geometrien
Grainau
Intermittent contact scanning capacitance microscopy-A novel method for 2D doping profiling
In: Microelectronics Reliability vol. 45 pg. 1568-1571.
Advanced Atomic Force Microscopy Techniques for Nano-Scale Analysis
In: 1st Conference of Micro- and Nanotechnology
Wien, Österreich
Intermittent contact scanning capacitance microscopy-A novel method for 2D doping profiling
In: 16th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)
Arcachon, Frankreich
Conducting atomic force microscopy for nanoscale electron emissions from various diamond-like carbon films
In: Applied Surface Science vol. 249 pg. 315-321.
DOI: 10.1016/j.apsusc.2004.12.029
Growth processes and surface properties of diamondlike carbon films
In: Journal of Applied Physics vol. 97 pg. 104901.
DOI: 10.1063/1.1890446
Intermittent Contact Scanning Capacitance Microscopy-First Results
In: Workshop on Scanning Probe Microscopy and Related Techniques
Infineon Technologies Villach, Österreich
A triangular section magnetic solenoid filter for removal of macro- and nano-particles from pulsed graphite cathodic vacuum arc plasmas
In: Surface & Coatings Technology vol. 200 pg. 2243-2248.
DOI: 10.1016/j.surfcoat.2004.09.032
Surface properties and growth of diamond-like carbon films prepared using CVD and PVD methods
In: E-MRS 2004
Strasbourg, Frankreich
Raster Sondenmikroskopie in der Mikro- und Nanoelektronik
pg. 12-16.
Bayerisches Staatsministerium für Wirtschaft, Infrastruktur, Verkehr und Technologie
New Trends in the application of scanning probe techniques in failure analysis
In: Microelectronics Reliability vol. 44 pg. 1541-1546.
DOI: 10.1016/j.microrel.2004.07.037
Effect of pressure on the deposition of hydrogen-free amorphous carbon and carbon nitride films by the pulsed cathodic arc discharge method
In: Journal of Vacuum Science & Technology A vol. 22 pg. 2329.
DOI: 10.1116/1.1798691
Simplified tunnelling current calculation for MOS structures with ultra-thin oxides for Conductive Atomic Force Microscopy investigations
In: Materials Science & Engineering B vol. 116 pg. 168-174.
DOI: 10.1016/j.mseb.2004.09.027
Raster Sondenmikroskopie in der Mikro- und Nanoelektronik
pg. 12-16.
AFM-based scanning capacitance techniques for deep sub-micron semiconductor failure analysis
In: Microelectronics Reliability vol. 44 pg. 1615-1619.
DOI: 10.1016/j.microrel.2004.07.079
Comparison of bulk and surface structure in a-C:H films
In: International Conference on Plasma Surface Engineering (PSE2004)
Garmisch-Partenkirchen
Filtered pulsed carbon cathodic arc: plasma and amorphous carbon properties
In: Journal of Applied Physics vol. 95 pg. 7624-7631.
DOI: 10.1063/1.1753081
Failure analysis of deep sub-micron semiconductor structures and thin films with atomic force microscopy methods
In: First International conference on Engineering Failure Analysis (ICEFA)
Lissabon, Portugal
AFM-based scanning capacitance techniques for deep sub-micron semiconductor failure analysis
In: 15th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)
Zürich, Schweiz
New Trends in the application of scanning probe techniques in failure analysis
In: 15th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)
Zürich, Schweiz
Failure Analysis of Deep Sub-Micron Semiconductor Structures
Chinese Academy of Science, Institute of Microelectronics Peking, China
Influence of the incident angle of energetic carbon ions on the properties of tetrahedral amorphous carbon (ta-C) films
In: 16th International Symposium on Plasma Chemistry
Taormina, Italien
Surface and structural properties of ultrathin diamond-like carbon coatings
In: Diamond and Related Materials vol. 12 pg. 1594-1600.
DOI: 10.1016/S0925-9635(03)00248-6
Atomic Force Microscopy Studies of Thin and Ultra-thin SiO2 Films . Final Report
In: 2nd VDE World Microtechnologies Congress
München
Influence of the incident angle of energetic carbon ions on the properties of tetrahedral amorphous carbon (ta-C) films
In: Journal of Vacuum Science & Technology A vol. 21 pg. 1655-1670.
DOI: 10.1116/1.1597888
SPM investigation of diamond-like carbon and carbon nitride films
In: Surface & Coatings Technology vol. 172 pg. 194-203.
DOI: 10.1016/S0257-8972(03)00338-4
Medium- to high-pressure plasma deposition of a-C:H films by dielectric barrier discharge
In: New Diamond and Frontier Carbon Technology vol. 13 pg. 191-206.
Reliability Analysis of Integrated Circuits in Deep Sub-Micron Technology
Chinese Academy of Science, Institute of Microelectronics Peking, China
UV unterstützter thermischer Oxidationsofen . Präsentation, Kategorie Patente
Würzburg
Atomic Force Microscopy Studies of Thin and Ultra-Thin SiO2 Films and Interfaces
Dalian University of Technology, Key-Labs Dalian, China
Failure Analysis of Deep Sub-Micron Semiconductor Structures
Chinese Academy of Science, Institute of Microelectronics Peking, China
Failure Analysis of Deep Sub-Micron Semiconductor Structures, Presentation held at: Dalian University of Technology
Chinese Academy of Science, Institute of Microelectronics Peking, China
Verfahren der Rastersondenmikroskopie . Präsentation, Kategorie Patente
Würzburg
Reliability Analysis of Integrated Circuits in Deep Sub-Micron Technology
Chinese Academy of Science, Institute of Microelectronics Peking, China
Failure Analysis of Deep Sub-Micron Semiconductor Structures
Dalian University of Technology, Key-Labs Dalian, China
Surface roughness, scratch resistance and tribological properties of hydrogenated amorphous carbon coatings prepared by low-pressure dielectric barrier discharge
In: Surface & Coatings Technology vol. 174-175 pg. 310-315.
DOI: 10.1016/S0257-8972(03)00649-2
Atomic Force Microscopy Studies of Thin and Ultra-Thin SiO2 Films and Interfaces
Chinese Academy of Science, Institute of Microelectronics Peking, China
Reliability Analysis of Integrated Circuits in Deep Sub-Micron Technology
Dalian University of Technology, Key-Labs Dalian, China
Advanced Analysis of Thin and Ultrathin SiO2/Si Interfaces with Combined Atomic Force Microscopy Methods
In: 29th International Symposium for Testing and Failure Analysis pg. 406-412.
Santa Clara, CA, USA
Characterization of thin and ultrathin SiO2 films and SiO2/Si interfaces with combined conducting and topographic atomic force microscopy
In: Microelectronics Reliability vol. 43 pg. 1465-1470.
DOI: 10.1016/S0026-2714(03)00260-9
Characterization of thin and ultrathin SiO2 films and SiO2/Si interfaces with combined conducting and topographic atomic force microscopy
In: 14th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)
Arcachon, Frankreich
A review of ULSI failure analysis techniques for DRAMs , Part II: defect isolation and visualization . Introductory Invited Paper
In: Microelectronics Reliability vol. 43 pg. 17-41.
DOI: 10.1016/S0026-2714(02)00295-0
The effect of the surface layer of tetrahedral amorphous carbon films on their tribological and electron emission properties investigated by atomic force microscopy
In: Applied Physics Letters vol. 82 pg. 3898-3900.
DOI: 10.1063/1.1581367
Advanced Analysis of Thin and Ultrathin SiO2/Si Interfaces with Combined Atomic Force Microscopy Methods
In: 29th International Symposium for Testing and Failure Analysis pg. 406-412.
Santa Clara, CA, USA
Surface roughness, mechanical and tribological properties of ultrathin tetrahedral amorphous carbon coatings from atomic force measurements
In: Thin Solid Films vol. 436 pg. 244-249.
DOI: 10.1016/S0040-6090(03)00592-3
Surface Roughness and Mechanical Properties of a-C:H Films Prepared by Low-pressure Dielectric Barrier Discharge
In: International Conference on Plasma Surface Engineering (PSE2002)
Garmisch-Partenkirchen
A review of ULSI failure analysis techniques for DRAMs , Part I: defect localization and verification . Introductory Invited Paper
In: Microelectronics Reliability vol. 42 pg. 307-316.
DOI: 10.1016/S0026-2714(02)00002-1
Comparison of Nanoscale Scratch and Wear Resistance of a-C:H, a-C:N and ta-C Fillms
In: International Conference on Plasma Surface Engineering (PSE2002)
Garmisch-Partenkirchen
Evaluation of thin oxide reliability by means of wafer level stress-testing
In: 8th European Parametric Test User Group Meeting
Prien am Chiemsee
Combined AFM Methods to Improve Reliability Investigations of Thin Oxides . Final Report
In: IEEE International Integrated Reliability Workshop
Lake Tahoe, CA, USA
Conducting Atomic Force Microscopy Studies for Reliability Evaluation of Ultrathin SiO2 Films . Final Report
In: IEEE International Integrated Reliability Workshop
Lake Tahoe, CA, USA
Deposition of a-C:H Films with an ECWR-Reactor at 27 MHz: Plasma Diagnostics and Correlation to Film Properties
In: Surface & Coatings Technology pg. 342-347.
DOI: 10.1016/S0257-8972(01)01313-5
Technologie-Zuverlässigkeit von Sub-Mikrometer-ICs
In: Seminarvortrag der Lehrstühle für Technische Elektronik und Technische Elektrophysik
Technische Universität München
IC-Ausfälle durch Elektromigration: Zuverlässigkeit metallischer Leitbahnen in ULSI-Technologien
In: F&M Feinwerktechnik Mikrotechnik Mikroelektronik
Reliability and Failure Analysis of 64 & 256 Mb DRAM Trench Capacitors
pg. 251-258.
München
Zuverlässigkeitsherausforderungen dünner Dielektrika in Sub-Mikrometer ICs
In: F&M Feinwerktechnik Mikrotechnik Mikroelektronik pg. 127-132.
Schnittstellen für schnelle Halbleiterspeicher
Berlin; Offenbach
Zuverlässigkeitsanalysen an Sub- Mikrometer CMOS Transistoren
In: QZ - Qualität und Zuverlässigkeit pg. 1264-1267.
Anodischer Niedervoltbogen als Beschichtungsplasma
In: Journal für Oberflächentechnik (JOT) pg. 13-16.
Failure Analysis of DRAM Storage Node Trench Capacitors for 0.35-Micron and Follow-On Technologies Using the Focused Ion Beam for Electrical and Physical Analysis
pg. 401-407.
Schnittstellen für schnelle Halbleiterspeicher
In: Nachrichtentechnische Zeitschrift (ntz) vol. 49 pg. 28-33.
Experimental Observations of Steady Anodic Vacuum Arcs with Hot Cathode
In: IEEE Transactions on Plasma Science vol. 24 pg. 1389-1393.
Laserstreuung und Entladungsdiagnostik am Beschichtungsplasma eines anodischen Vakuumbogens
In: Fortschritt-Berichte / VDI Fertigungstechnik vol. Nr. 336
VDI-Verlag Düsseldorf
Abscheidung dünner Metallschichten durch eine neuartige Plasmaentladung
In: Seminarvortrag am Lehrstuhl für Technische Elektrophysik
Technische Universität München
Laserinduzierte Fluoreszenz am expandierenden Vakuumbogenplasma
In: Frühjahrstagung der Deutschen Physikalischen Gesellschaft
Erlangen
Grundlagen der Laserinduzierten Fluoreszenz
In: Seminarvortrag am Lehrstuhl für Technische Elektrophysik
Technische Universität München
Vergleich von Kalibrierungsmethoden für Laserinduzierte Fluoreszenz (LIF)
In: Frühjahrstagung der Deutschen Physikalischen Gesellschaft
Greifswald
mehrere Projekte in den Bereichen Oberflächenanalytik, thermische und elektrische Charakterisierung neuer Materialien, >20 abgeschlossene Projekte
Elektronische Bauelemente, Raster-Sonden-Mikroskopie (RSM), Raster-Elektronen-Mikroskopie (REM) und Halbleiteranalytik
Röntgenanalytik (EDX, WDX), Gefüge- und Strukturanalytik (EBSD), Mikro-Röntgenfluoreszenz (μ-XRF) Raster-Transmissions-Elektonenmikroskopie (STEM), korrelative Mikroskopie
kombinierte mechanische, magnetische, elektrische, thermische und chemische Mikro-Charakterisierung
Fehler- und Ausfallanalytik, Wafer-Level-Zuverlässigkeitsanalytik, HL-Lebensdauer-Untersuchungen
Berufung: Professor, Technische Hochschule Deggendorf, 1998 Promotion: Dr.-Ing., TU München, 1994 Studienabschluss: Dipl.-Ing. Elektrotechnik, 1989
1989-1994: Wissenschaftlicher Assistent, TU München 1994-1998: Siemens HL, IBM/Siemens/Toshiba DRAM – Projekt in Burlington, Vermont, USA seit 1998: Professor an der Technischen Hochschule Deggendorf, Fakultät Elektrotechnik und Medientechnik, Leiter des Insituts für für Qualitäts- und Materialanalysen (IQMA)
Gutachter für internationale Forschungseinrichtungen und wissenschaftliche Zeitschriften