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Heiko Ranzinger, M.Eng.

Fakultät Elektrotechnik und Medientechnik

Mitarbeitende

Laboringenieur

E 218

0991/3615-551

0991/3615-599

Sprechzeiten

Montag - Donnerstag

Publikationen

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Zeitschriftenartikel

Günther Benstetter
Peter Breitschopf
Werner Frammelsberger
Heiko Ranzinger
P. Reislhuber
T. Schweinböck

AFM-based scanning capacitance techniques for deep sub-micron semiconductor failure analysis.

In: Microelectronics Reliability (vol. 44) , pg. 1615-1619

(2004)

DOI: 10.1016/j.microrel.2004.07.079

Vortrag

Günther Benstetter
Peter Breitschopf
Werner Frammelsberger
Heiko Ranzinger
P. Reislhuber
T. Schweinböck

AFM-based scanning capacitance techniques for deep sub-micron semiconductor failure analysis.

Zürich, Schweiz 2004.

(2004)

Vortrag

Günther Benstetter
Werner Frammelsberger
Edgar Lodermeier
Heiko Ranzinger
D. Liu
Peter Breitschopf
W. Bergbauer
Alexander Hofer

Raster-Sonden-Mikroskopie (SPM) in der Fehler- und Zuverlässigkeitsanalytik.

Grainau 2006.

(2006)

Zeitschriftenartikel

M. Lanza
M. Porti
M. Nafría
Günther Benstetter
Werner Frammelsberger
Heiko Ranzinger
Edgar Lodermeier
G. Jaschke

Influence of the manufacturing process on the electrical properties of thin (< 4 nm) Hafnium based high-k stacks observed with CAFM.

In: Microelectronics Reliability (vol. 47) , pg. 1424-1428

(2007)

Abstract anzeigen

In this work, the dependence of the electrical characteristics of some thin (<4 nm) HfO2, HfSiO and HfO2/SiO2 stacks on their manufacturing process is studied at the nanoscale. Topography, current maps and current–voltage (I–V) characteristics have been collected by conductive atomic force microscope (CAFM), which show that their conductivity depends on some manufacturing parameters. Increasing the annealing temperature, physical thickness or Hafnium content makes the structure less conductive.

Vortrag

M. Lanza
M. Porti
M. Nafría
Günther Benstetter
Werner Frammelsberger
Heiko Ranzinger
Edgar Lodermeier
G. Jaschke

Influence of the manufacturing process on the electrical properties of thin (< 4 nm) Hafnium based high-k stacks observed with CAFM.

Arcachon, Frankreich 2007.

(2007)

Zeitschriftenartikel

M. Lanza
M. Porti
M. Nafría
X. Aymerich
Günther Benstetter
Edgar Lodermeier
Heiko Ranzinger
G. Jaschke
S. Teichert
L. Wilde
P. Michalowski

Crystallization and silicon diffusion nanoscale effects on the electrical properties of Al2O3 based devices.

In: Microelectronic Engineering (vol. 86) , pg. 1921-1924

(2009)

Abstract anzeigen

In this work, Atomic Force Microscopy (AFM) based techniques are used to study, at the nanoscale, the dependence of the electrical properties of Al2O3 stacks for Flash memories on the percent of diffused Silicon and material crystallization after being annealed at different temperatures.

Zeitschriftenartikel

M. Lanza
M. Porti
M. Nafría
X. Aymerich
Günther Benstetter
Edgar Lodermeier
Heiko Ranzinger
G. Jaschke
S. Teichert
L. Wilde
P. Michalowski

Conductivity and Charge Trapping After Electrical Stress in Amorphous and Polycrystalline Al2O3-Based Devices Studied With AFM-Related Techniques.

In: IEEE Transactions on Nanotechnology (vol. 10) , pg. 344-351

(2011)

Abstract anzeigen

In this paper, atomic force microscopy-based techniques have been used to study, at nanoscale, the dependence of the electrical properties of Al2O3 stacks for flash memories on the annealing temperature (T-A). The electrical characterization has been combined with other techniques (for example, transmission electron microscopy) that have allowed to investigate the dependence of the stack crystallization and the Si diffusion from the substrate to the gate oxide on T-A. The combination of both the analyses has allowed to explore if there is a relation between the percentage of diffused silicon and material crystallization with the conductivity and charge trapping of Al2O3 stacks.

Vortrag